A comparative study of depth profiling of interface states using charge pumping and low frequency noise measurement in SiO2/HfO2 gate stack nMOSFETs
- Journal
- Microelectronics Engineering
- Vol
- 88
- Page
- p.3411
- Year
- 2011
- File
- 2011-ME-KTLEE.pdf (1.1M) 0회 다운로드 DATE : 2021-03-30 21:13:41
- Link
- https://doi.org/10.1016/j.mee.2009.08.002 159회 연결