포항공대 EESL Fearless challenge

A comparative study of depth profiling of interface states using charge pumping and low frequency noise measurement in SiO2/HfO2 gate stack nMOSFETs

Journal

Microelectronics Engineering

Vol

88

Page

p.3411

Author

K.T.Lee, C.Y.Kang, H.S.Choi, S.H.Hong, G.B.Choi, J.C.Kim, S.H.Song, R.H.Baek, M.S.Park, H.C. Sagong, B.H.Lee, G.Bersuker, H.H.Tseng, R.Jammy, Y.H.Jeong

Year

2011

Date

2011.12

doi

https://doi.org/10.1016/j.mee.2009.08.002

File

2011-ME-KTLEE.pdf (1.1M) 0회 다운로드 DATE : 2021-03-30 21:13:41

Link

https://doi.org/10.1016/j.mee.2009.08.002 160회 연결