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    • NMOS Compatible Work Function of TaN Metal Gate With Gadolinium Oxide Buffer Layer on Hf-Based Dielectrics
    Journal
    IEEE Elec. Dev. Lett.
    Vol
    27(10)
    Page
    802
    Author
    G. Thareja, S. Rhee, H.-C. Wen, R. Harris, P. Majhi, B. H. Lee and J.C. Lee
    Year
    2006
    Date
    2006.09.25
    doi
    10.1109/LED.2006.882521
    File
    2006_EDL_G.Thareja.pdf (181.7K) 0회 다운로드 DATE : 2021-04-01 21:59:38