목록 A novel bias temperature instability characterization methodology for high-k MOSFETs Journal IEEE ESSDERC Page 287-290 Author D.Heh, R. Choi, C.D. Young, B. H. Lee and G.Bersuker Year 2006 Date 2007.02.12 doi 10.1109/ESSDER.2006.307719 File 2006_EDL_D.Heh.pdf (107.8K) 0회 다운로드 DATE : 2021-04-01 22:04:52 Link http://10.1109/ESSDER.2006.307719 59회 연결
