The effect of interfacial layer properties on the performance of Hf-based gate stack devices
Journal
J. Appl. Phys.
Vol
100(9)
Page
094108
Author
G. Bersuker, C. S. Park, J. Barnett, P.S. Lysaght, P. D. Kirsch, C.D. Young, R. Choi, B. H. Lee, B. Foran, K. van Benthem, S. J. Pennycook, P. M. Lenahan and J. T. Ryan
Year
2006
Date
2006.11.10
doi
https://doi.org/10.1063/1.2362905
File
2006_JAP_G.Bersuker.pdf (815.5K) 0회 다운로드 DATE : 2021-04-01 22:09:02