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The effect of interfacial layer properties on the performance of Hf-based gate stack devices

Journal

J. Appl. Phys.

Vol

100(9)

Page

094108

Author

G. Bersuker, C. S. Park, J. Barnett, P.S. Lysaght, P. D. Kirsch, C.D. Young, R. Choi, B. H. Lee, B. Foran, K. van Benthem, S. J. Pennycook, P. M. Lenahan and J. T. Ryan

Year

2006

Date

2006.11.10

doi

https://doi.org/10.1063/1.2362905

File

2006_JAP_G.Bersuker.pdf (815.5K) 0회 다운로드 DATE : 2021-04-01 22:09:02

Link

https://doi.org/10.1063/1.2362905 143회 연결