Mobility and Charge Trapping Comparison for Crystalline and Amorphous HfON and HfSiON Gate Dielectrics
Journal
Appl. Phys. Lett.
Vol
89(24)
Page
242909
Author
P.Kirsch, M.A.Quevedo-Lopez, S.A.Krishnan, G.Pant, M.J.Kim, R.M.Wallace, B.E.Gande, and B. H. Lee
Year
2006
Date
2006.12.13
doi
https://doi.org/10.1063/1.2392992
File
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