Mobility and Charge Trapping Comparison for Crystalline and Amorphous HfON and HfSiON Gate Dielectrics
- Journal
- Appl. Phys. Lett.
- Vol
- 89(24)
- Page
- 242909
- Year
- 2006
- File
- 2006_APL_P.D.Kirsch.pdf (410.1K) 0회 다운로드 DATE : 2021-04-02 13:47:57
- Link
- https://doi.org/10.1063/1.2392992 125회 연결