포항공대 EESL Fearless challenge

Investigation of Random Telegraph Noise in Gate Induced Drain Leakage and Gate Edge Direct Tunneling Currents of High-k MOSFETs

Journal

IEEE Trans. on Elect. Dev.

Vol

57(4)

Page

913-918

Author

J.-W. Lee, B.H. Lee, H. Shin, and J.-H. Lee

Year

2010

Date

2010.02.25

doi

10.1109/TED.2010.2041871

File

2010_EDL_JWLEE.pdf (753.0K) 1회 다운로드 DATE : 2021-04-02 13:51:48

Link

http://10.1109/TED.2010.2041871 98회 연결