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    • The Pulsed Id-Vg methodology and Its Application to the Electron Trapping Characterization of High-κ gate Dielectrics
    Journal
    J. Semi. Tech. Sci.
    Vol
    10(2)
    Page
    79-99
    Author
    C.D. Young, D. Heh, R. Choi, B.H. Lee, G. Bersuker
    Year
    2010
    Date
    2010.06.30
    doi
    https://doi.org/10.5573/JSTS.2010.10.2.079
    File
    2010_JSTS_CDYoung.pdf (1.1M) 0회 다운로드 DATE : 2021-04-02 13:53:42