Comparison of Low Frequency Noise in Channel and Gate-Induced Drain Leakage Currents of High-k nFETs
- Journal
- IEEE Elect. Dev. Lett.
- Vol
- 31(10)
- Page
- 1086-1088
- Year
- 2010
- File
- 2010_EDL_JWLEE2.pdf (306.0K) 0회 다운로드 DATE : 2021-04-02 13:54:51
- Link
- http://10.1109/LED.2010.2058839 91회 연결