포항공대 EESL EESL Fearless challenge

전체메뉴

전체메뉴
CONTACT US
  • LOGIN
    • Performance and reliability analysis of p-type metal-oxide-semiconductor field effect transistors with various combinations of Ru and Al gate metal
    Journal
    J. Vac. Sci. Technol.
    Vol
    28(6)
    Page
    1267
    Author
    H.B. Park, C.S.Park, C.Y. Kang, S.-C. Song, B.H. Lee, T.W. Kim, T.-Y. Jang, D.-H. Kim, J. K. Jeong, and Ri. Choi
    Year
    2010
    Date
    2010.11.11
    doi
    https://doi.org/10.1116/1.3514103
    File
    2010_JVSTB_HBPARK.pdf (104.9K) 0회 다운로드 DATE : 2021-04-02 13:56:19