Hot carrier degradation in HfSiON∕TiN fin shaped field effect transistor with different substrate orientations
- Journal
- J. Vac. Sci. Technol. B
- Vol
- 27 (1)
- Page
- 468
- Year
- 2009
- File
- 2009_JVSTB_CDYOUNG.pdf (703.9K) 0회 다운로드 DATE : 2021-04-02 16:48:38
- Link
- http://doi.org/10.1116/1.3072919 178회 연결