포항공대 EESL Fearless challenge

Time-Dependent Dielectric Breakdown of La2O3-Doped High-k/Metal Gate Stacked NMOSFETs

Journal

IEEE Electron Device Letters

Vol

30 (3)

Page

298-301

Author

I.S. Han, O.S. Yoo, W.H. Choi, H.M. Kwong, M.K. Na, C.Y. Kang, G. Bersuker, B.H. Lee, Y.H. Jeong, H.D. Lee, R. Jammy

Year

2009

Date

2009.03

doi

http://doi.org/10.1109/LED.2008.2012272

File

2009_EDL_ISHAN.pdf (290.2K) 0회 다운로드 DATE : 2021-04-02 17:11:36

Link

http://doi.org/10.1109/LED.2008.2012272 163회 연결