포항공대 EESL Fearless challenge

Effect of Si capping layer on the interface quality and NBTI of high mobility channel Ge-on-Si pMOSFETs

Journal

Microelectronic Engineering

Vol

86 (3)

Page

259-262

Author

O.S. Yoo, J. Oh, K.S. Min, C.Y. Kang, B.H. Lee, K.T. Lee, M.K. Na, H.-M. Kwon, P. Majhi, H-H Tseng, R. Jammy, J.S. Wang, H.-D. Lee

Year

2009

Date

2009.03

doi

http://doi.org/10.1016/j.mee.2008.04.024

File

2009_ME_OSYOO.pdf (319.3K) 0회 다운로드 DATE : 2021-04-02 17:12:46

Link

http://doi.org/10.1016/j.mee.2008.04.024 178회 연결