Effect of Si capping layer on the interface quality and NBTI of high mobility channel Ge-on-Si pMOSFETs
- Journal
- Microelectronic Engineering
- Vol
- 86 (3)
- Page
- 259-262
- Year
- 2009
- File
- 2009_ME_OSYOO.pdf (319.3K) 0회 다운로드 DATE : 2021-04-02 17:12:46
- Link
- http://doi.org/10.1016/j.mee.2008.04.024 179회 연결