포항공대 EESL EESL Fearless challenge

전체메뉴

전체메뉴
CONTACT US
  • LOGIN
    • Low-Frequency Noise After Channel Soft Oxide Breakdown in HfLaSiO Gate Dielectric
    Journal
    IEEE Electron Device Letters
    Vol
    30 (5)
    Page
    523-525
    Author
    H.S. Choi, S.H. Hong, R.H. Baek, K.T. Lee, C.Y. Kang, R. Jammy, B.H. Lee, Y.H. Jeong
    Year
    2009
    Date
    2009.04.07
    doi
    http://doi.org/10.1109/LED.2009.2015586
    File
    2009_EDL_HSCHOI.pdf (286.6K) 0회 다운로드 DATE : 2021-04-02 17:17:31