포항공대 EESL Fearless challenge

Reliability of La-Doped Hf-Based Dielectrics nMOSFETs

Journal

IEEE Transactions on Device and Materials Reliability

Vol

9 (2)

Page

171-179

Author

C.Y. Kang, P. Kirsch, B.H. Lee, H.H. Tseng, R. Jammy

Year

2009

Date

2009.01.05

doi

http://doi.org/10.1109/TDMR.2009.2020741

File

2009_DMR_CYKANG.pdf (1.5M) 0회 다운로드 DATE : 2021-04-02 17:21:12

Link

http://doi.org/10.1109/TDMR.2009.2020741 176회 연결