포항공대 EESL Fearless challenge

Reliability Characteristics of La-doped High-k/Metal Gate nMOSFETs

Journal

Journal of Semiconductor Technology and Science

Vol

9 (3)

Page

166-173

Author

C.Y. Kang, R. Choi, B.H. Lee, R. Jammy

Year

2009

Date

2009.12

doi

http://doi.org/10.5573/JSTS.2009.9.3.166

File

2009_STS_CYKANG.pdf (3.9M) 0회 다운로드 DATE : 2021-04-02 17:24:22

Link

http://doi.org/10.5573/JSTS.2009.9.3.166 139회 연결