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    • Dominant Device Instability Mechanism in Scaled Metal–Oxide–Semiconductor Field-Effect Transistors with Hafnium Oxide Dielectric
    Journal
    Japanese Journal of Applied Physics
    Vol
    48 (9)
    Page
    091404
    Author
    R. Choi, T.W. Kim, H. Park, B.H. Lee
    Year
    2009
    Date
    2009.09.24
    doi
    http://doi.org/10.1143/JJAP.48.091404
    File
    2009_JJAP_RCHOI.pdf (93.6K) 1회 다운로드 DATE : 2021-04-02 17:25:40