Effects of a Gd capping layer on electrical characteristics of metal-oxide-semiconductor field effect transistors with a TaC gate electrode and a HfSiON gate dielectric
- Journal
- Applied Physics Letters
- Vol
- 95 (19)
- Page
- 192113
- Year
- 2009
- File
- 2009_APL_HBPARK2.pdf (100.9K) 0회 다운로드 DATE : 2021-04-02 17:27:15
- Link
- http://doi.org/10.1063/1.3264086 177회 연결