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Effects of a Gd capping layer on electrical characteristics of metal-oxide-semiconductor field effect transistors with a TaC gate electrode and a HfSiON gate dielectric

Journal

Applied Physics Letters

Vol

95 (19)

Page

192113

Author

H.B. Park, C.S. Park, C.Y. Kang, S.C. Song, B.H. Lee, T.Y. Jang, T.W. Kim, J.K. Jeong, R. Choi

Year

2009

Date

2009.11.09

doi

http://doi.org/10.1063/1.3264086

File

2009_APL_HBPARK2.pdf (100.9K) 0회 다운로드 DATE : 2021-04-02 17:27:15

Link

http://doi.org/10.1063/1.3264086 178회 연결