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    • Device Performance and Reliability Characteristics of Tantalum–Silicon–Nitride Electrode/Hafnium Oxide n-Type Metal–Oxide–Semiconductor Field-Effect Transistor Depending on Electrode Composition
    Journal
    Jpn. J. Appl. Phys.
    Vol
    48 (11)
    Page
    116506
    Author
    H. Park, M. Chang, M. Jo, R. Choi, B.H. Lee, H. Hwang
    Year
    2009
    Date
    2009.11.20
    doi
    http://doi.org/10.1143/JJAP.48.116506
    File
    2009_JJAP_HPARK.pdf (205.9K) 0회 다운로드 DATE : 2021-04-02 17:28:32