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    • Process-Dependent N/PBTI Characteristics of TiN Gate FinFETs
    Journal
    IEEE Electron Device Letters
    Vol
    33 (7)
    Page
    937-939
    Author
    J.J. Kim, M. Cho, L. Pantisano, Y.G. Lee, U. Jung, T. Chiarella, M. Togo, N. Horiguchi, G. Groeseneken, B.H. Lee
    Year
    2012
    Date
    2012.05.16
    doi
    http://doi.org/10.1109/LED.2012.2193868
    File
    2012-EDL-JJKIM.pdf (385.9K) 1회 다운로드 DATE : 2021-04-02 17:37:26