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    • Contact Resistance Reduction of WS2 FETs Using High-Pressure Hydrogen Annealing
    Journal
    IEEE Journal of the Electron Devices Society
    Vol
    6
    Page
    164-168
    Author
    Y.J. Kim, W.J. Park, J.H. Yang, Y.H. Kim, B.H. Lee
    Year
    2017
    Date
    2017.12.08
    doi
    http://doi.org/10.1109/JEDS.2017.2781250
    File
    2017-JEDS-YJKIM.pdf (797.7K) 2회 다운로드 DATE : 2021-04-02 18:09:46