포항공대 EESL EESL Fearless challenge

전체메뉴

전체메뉴
CONTACT US
  • LOGIN
    • Area and Power Efficient Ternary Serial Adder Using ZnO Stack Channel FETs
    Journal
    Nanoscale Advances
    Author
    K.Y.Kim, S.M.Kim, S.Y. Kim, Y.S.Lee, H.W.Lee, S.H Kang, B.H.Lee
    Year
    2025
    Date
    2025
    File
    Area and Power Efficient Ternary Serial Adder Using ZnO Stack Channel FETs.pdf (955.2K) 0회 다운로드 DATE : 2025-04-21 17:21:46