Extremely Thin (~2 nm) Proximity Pt Silicide Formation Process using Continuous-Wave Laser Scanning Anneal
Journal
Submitted to IEEE Electron Device Letters
Author
S.M.Kim, M.G.Kwon, M.J.Kim, C.B.Lee, K.S.Kim, H.J.Hwang, J.Kim, B.H.Lee
Year
2024
Date
2024