포항공대 EESL Fearless challenge

Quantitative Analysis of Deuterium Annealing Effect on Poly-Si TFTs by Low Frequency Noise and DC I-V Characterization

Journal

IEEE Trans. on Electron Device

Vol

65(4)

Page

p.1640

Author

D.H.Kim, S.K.Lim, B.Y.Bae, C.K.Kim, S.W.Lee, M.S.Seo, S.Y.Kim, K.M.Hwang, G.B.Lee, B.H. Lee. Y.G.Choi

Year

2018

Date

2018.03.01

doi

http://doi.org/10.1109/TED.2018.2805316

File

2018-TED-KAIST.pdf (1.8M) 1회 다운로드 DATE : 2021-03-31 15:13:05

Link

http://doi.org/10.1109/TED.2018.2805316 259회 연결