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    • Unique reliability characteristics of fully depleted silicon-on-insulator tunneling FET
    Journal
    Jpn. J. Appl. Phys.
    Vol
    57(4)
    Page
    05FB02
    Author
    S.C. Kang, D.H. Lim, S.K. Lim, J.W. Noh, S.M. Kim, S.K. Lee, C.H. Choi, and B.H. Lee
    Year
    2018
    Date
    2018.03.06
    doi
    https://doi.org/10.7567/JJAP.57.04FB02
    File
    2018-JJAP-SCKang.pdf (948.7K) 2회 다운로드 DATE : 2021-03-31 15:16:49