포항공대 EESL Fearless challenge

Impact of Post-Metal Annealing with Deuterium or Nitrogen for Curing a Gate Dielectric using Joule Heat Driven by Punch-Through Current

Journal

IEEE Electron Device Letters

Vol

42(2)

Page

pp. 276-279

Author

J.Y. Park, T.J. Yoo, J.M. Yu, B.H. Lee, Y.G. Choi

Year

2021

Date

2021.02.02

doi

http://doi.org/10.1109/LED.2020.3043384

File

09288681.pdf (1.2M) 4회 다운로드 DATE : 2021-03-31 17:35:21

Link

http://doi.org/10.1109/LED.2020.3043384 209회 연결