포항공대 EESL Fearless challenge

Quantitative Analysis of High-Pressure Deuterium Annealing Effects on Vertically-Stacked Gate-All-Around SONOS Memory

Journal

IEEE Transactions on Electron Devices

Vol

67(9)

Page

pp.3903-3907

Author

J.M.Yu, J.Y. Park, T.J. Yoo, J.K. Han, B.H. Lee, D.H. Yun, G.B. Lee, S.U. Kim, B.H.Lee, Y.K. Choi

Year

2020

Date

2020.07.24

doi

http://doi.org/10.1109/TED.2020.3008882

File

09147049.pdf (3.9M) 3회 다운로드 DATE : 2021-03-31 17:46:46

Link

http://doi.org/10.1109/TED.2020.3008882 238회 연결