Quantitative Analysis of High-Pressure Deuterium Annealing Effects on Vertically-Stacked Gate-All-Around SONOS Memory
- Journal
- IEEE Transactions on Electron Devices
- Vol
- 67(9)
- Page
- pp.3903-3907
- Year
- 2020
- File
- 09147049.pdf (3.9M) 3회 다운로드 DATE : 2021-03-31 17:46:46
- Link
- http://doi.org/10.1109/TED.2020.3008882 239회 연결