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    • Charging Effect by Fluorine-Treatment and Recess Gate for Enhancement-Mode on AlGaN/GaN High Electron Mobility Transistors
    Journal
    Nanomaterials
    Vol
    10(11)
    Page
    2116
    Author
    S.C.Kang, H.-W.Jung, S.-J.Chang, S.M.Kim, S.K.Lee, B.H.Lee, H.Kim, Y.-S.Noh, S.-H.Lee, S.-I.Kim, H.-K.Ahn, J.-W Lim
    Year
    2020
    Date
    2020.08.24
    doi
    https://doi.org/10.3390/nano10112116
    File
    nanomaterials-10-02116-v2.pdf (4.3M) 2회 다운로드 DATE : 2021-03-31 18:46:28