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Effect of F2 Postmetallization Annealing on the Electrical and Reliability Characteristics of HfSiO Gate Dielectric

Journal

IEEE Elec. Dev. Lett.

Vol

28 (1)

Page

p.21-23

Author

M. Chang, M. Jo, H. Park, H. Hwang, B. H. Lee, and R.Choi

Year

2007

Date

2006.12.26

doi

https://doi.org/10.1109/LED.2006.887941

File

2007_EDL_MCHANG.pdf (413.0K) 0회 다운로드 DATE : 2021-04-01 13:05:22

Link

https://doi.org/10.1109/LED.2006.887941 105회 연결