포항공대 EESL Fearless challenge

Mechanism of electron trapping and characteristics of traps in HfO2 gate stacks

Journal

IEEE Transactions on Device and Materials Reliability

Vol

7 (1)

Page

p.138-145

Author

G.Bersuker, J.H.Sim, C.S.Park, C.D.Young, S.V.Nadkarni, R.Choi and B. H. Lee

Year

2007

Date

2007.07.16

doi

http://doi.org/10.1109/TDMR.2007.897532

File

2007_TDANR_GBERSUKER.pdf (935.1K) 0회 다운로드 DATE : 2021-04-01 13:14:58

Link

http://doi.org/10.1109/TDMR.2007.897532 174회 연결