Mechanism of electron trapping and characteristics of traps in HfO2 gate stacks
- Journal
- IEEE Transactions on Device and Materials Reliability
- Vol
- 7 (1)
- Page
- p.138-145
- Year
- 2007
- File
- 2007_TDANR_GBERSUKER.pdf (935.1K) 0회 다운로드 DATE : 2021-04-01 13:14:58
- Link
- http://doi.org/10.1109/TDMR.2007.897532 175회 연결