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Improved Ge Surface Passivation With Ultrathin SiOx Enabling High-Mobility Surface Channel pMOSFETs Featuring a HfSiO/WN Gate Stack

Journal

IEEE Electron Device Letters

Vol

28 (4)

Page

p.308-311

Author

S. Joshi, C. Krug, D. heh, H.J. Na, H.R. Harris, J.W, Oh, P.D. Kirsch, P. Majhi, B. H. Lee, H.H. Tseng, R. Jammy, J.C. Lee, S.K. Banerjee

Year

2007

Date

2007.04.02

doi

http://doi.org/10.1109/LED.2007.893274

File

2007_EDL_SYOSHI.pdf (335.2K) 0회 다운로드 DATE : 2021-04-01 13:23:39

Link

http://doi.org/10.1109/LED.2007.893274 174회 연결