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Effects of Metal Gate-Induced Strain on the Performance of Metal-Oxide-Semiconductor Field Effect Transistors with Titanium Nitride Gate Electrode and Hafnium Oxide Dielectric

Journal

Appl. Phys. Lett.

Vol

91

Page

033511

Author

C.Y. Kang, R. Choi, M. Hussain, J. Wang, Y.J. Suh, H. Floresca, M. Kim, J. Kim, B. H. Lee, R. Jammy

Year

2007

Date

2007.07.19

doi

http://doi.org/10.1063/1.2766667

File

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Link

http://doi.org/10.1063/1.2766667 170회 연결