포항공대 EESL EESL Fearless challenge

전체메뉴

전체메뉴
CONTACT US
  • LOGIN
    • Higher Permittivity Rare Earth Doped Hafnium Oxide for sub-45nm Metal-Insulator-Semiconductor Device Applications
    Journal
    Appl. Phys. Lett.
    Vol
    91
    Page
    062906
    Author
    S. Govindarajan, T. S. Böscke, P. Sivasubramani, U. Schröder, S. Ramanathan, P.D. Kirsch,B. E. Gnade, B. H. Lee, H.-H. Tseng, R. Jammy
    Year
    2007
    Date
    2007.08.07
    doi
    http://doi.org/10.1063/1.2768002
    File
    2007_APL_SGOVINDARAJAN.pdf (444.5K) 0회 다운로드 DATE : 2021-04-01 13:49:38