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    • Improved Hot Carrier Reliability Characteristics of Metal Oxide Semiconductor Field Effect Transistors with High-k Gate Dielectric by Using High Pressure Deuterium Post Metallization Annealing
    Journal
    Jpn. J. Appl. Phys.
    Vol
    46 (33)
    Page
    p.786-788
    Author
    H. Park, R. Choi, B.H. Lee, and H. Hwang
    Year
    2007
    Date
    2007.08.17
    doi
    http://doi.org/10.1143/JJAP.46.L786
    File
    2007_JAP_HPARK.pdf (102.2K) 1회 다운로드 DATE : 2021-04-01 13:53:52