Phase Separation of Ni Germanide Formed on a Ge-on-Si Structure for Ge MOSFETs
- Journal
- Electrochemical and Solid-State Lett.
- Vol
- 11 (1)
- Page
- p.H1-H3
- Year
- 2008
- File
- 2008_ESSL_YYZHANG.pdf (354.6K) 0회 다운로드 DATE : 2021-04-01 14:48:58
- Link
- http://doi.org/10.1149/1.2795836 88회 연결