Conferences 10 페이지 | 포항공대 EESL

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Total 516건 10 페이지

2011
246

International
"Modulation of Graphene Conductance using Ferroelectric polarization" H.J.Hwang, E.J. Paek, H.J.Chung, Sunae Seo, B.H.Lee, Nano Korea, 2011, Research innovation award.

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245

International
"Electrical Characteristics of Top Gate Graphene FETs on Laser Graphitized 4H-SiC" C.Cho, C.G.Kang, Y.G.Lee, H.J.Hwang, S.K.Lee, S.K. Lim, S.Y.Lee, H.Hwang, B.H.Lee, Silicon Nanoworkshop (SNW), 2011.

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244

International
"Variability and Feasibility of CVD Graphene Interconnect" C.G.Kang, S.K.Lee, Y.G.Lee, H.J.Hwang, C.H.Cho, J.S.Heo, H.J.Chung, H.J.Yang, S.E.Seo, B.H.Lee, Proc. of VLSI-TSA, 2011.

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243

Domestic
"Passivation effects of low temperature ALD Al2O3 gate dielectric for graphene FET" C.G. Kang, Y.G. Lee, S.K. Lee, H.J. Hwang, C.H. Cho, S.K. Lim, S.Y. Lee, E.J. Park, J. Heo, H.J. Chung, H. Yang, S. Seo and B.H. Lee, 18th Korean Conference on Semiconductors (KCS), 2011.

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242

Domestic
"Top Gate Graphene Field Effect Transistor on MLG/4H-SiC Substrates" H.J.Hwang, C.H.Cho, C.G.Kang, S.K.Lim, S.Y.Lee, E.J.Paek, H.Hwang, B.H.Lee, 18th Korean Conference on Semiconductors (KCS), 2011.

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241

Domestic
"A Study on the Electrical Characterization methods for CdS channel MOSFETs" U.J. Jung, Y.G. Lee, J.J. Kim, I. Mejia, A. Salas-Villasenor, M. Quevedo-Lopez, J. Kim and B.H. Lee, 18th Korean Conference on Semiconductors (KCS), 2011.

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240

Domestic
"Short Pulse Characterization of Hysteric Characteristics of Graphene Field Effect Transistor" Y.G. Lee, C.G. Kang, U.J. Jung, J.J. Kim, H.J. Hwang, H.J. Chung, H. Yang, S. Seo and B.H. Lee, 18th Korean Conference on Semiconductors (KCS), 2011.

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239

Domestic
"Reduction of Unwanted External Noises of Low Frequency Noise (1/f noise) Measurement" S.K. Lee, H.J. Hwang, Y.G. Lee, J.J. Kim, C.G. Kang, C.Y. Kang and B.H. Lee, 8th Korean Conference on Semiconductors (KCS), 2011.

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238

International
"Characteristics of Very Low Temperature ALD Al2O3 Gate Dielectric for Top Gate Graphene MOSFET Applications" Y.G. Lee, C.G. Kang, S.K. Lee, K.J. Choi, C.H. Cho, H.J. Hwang, S.Y. Lee, S.K. Lim, U.J. Jung, and B.H. Lee, Ext. Abs. of Int. Workshop on Dielectric Thin Film (IWDTF), 2011.

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2010
237

International
"Study of the graphene transfer from graphitized SiC substrate" S.K. Lim, C.H. Cho, S.Y. Lee, H.J. Hwang, C.G. Kang, Y.G. Lee, J. Ahn, B.H. Lee, Ext. Abs. of SSDM, 2010.
236

International
"Feasibility of Mechanical Switch Device using a Graphite Electrode" B.H. Lee, H.J. Hwang, Y.G. Lee, U.J. Jung, IMRS, Cancun, 2010, invited.
235

International
"Feasibility of Wrinkle Free Graphene Process" B.H. Lee, C.H. Cho, S.K. Lim, S.Y. Lee, H.J. Hwang, Y.G. Lee, U.J. Jung, C.G. Kang, Abs. of American Vac. Soc. Symposium, Albuquerque, 2010, invited.
234

Domestic
"Carbon condensation and Germanium sublimation in GeC films by pulse laser annealing" C.H. Cho, S.H. Kim, S.K. Lim, S.Y. Lee, H.J. Hwang, H. Hwang, B.H. Lee, 17th Korean Conference on Semiconductors (KCS), 2010.
233

Domestic
"Simplified analytic model for the scaling limit of nano electro mechanical switch devices" H.J. Hwang, S.K. Lim, S.Y. Lee, C.H. Cho, B.H. Lee, 17th Korean Conference on Semiconductors (KCS), 2010.
232

International
"Extreme Low power Technology inspired by Biological Systems" B.H. Lee, Semicon Korea, 2010, invited.
2009
231

International
"A Novel Damage-Free High-k Etch Technique Using Neutral Beam Assisted Atomic Layer Etching (NBALE) for Sub-32nm Technology Node Low Power Metal Gate/High-k Dielectric CMOSFETs" K.S.Min, C.Y.Kang, C.Park, C.S.Park, B.J.Park, J.B. Park, M.Hussain, J.C.Lee, B.H.Lee, P.Kirsch, H.H. Tseng, R.Jammy, G.Y.Yeom, Proc. of Int. Elect. Dev. Meeting, 2009.

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230

International
"NEMS-CMOS hybrid technology and its applications" B.H.Lee, C.H.Cho, H.J.Hwang, S.K. Lim, S.Y. Lee, H.Hwang, NANO Korea, 2009, Invited.

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229

International
"Dipole model explaining high-k/metal gate field transistor threshold voltage tuning" P.D.Kirsch, P.Sivasubramani, J. Huang, C.D.Young, M. A. Quevedo-Lopoez, H. C.Wen, H. Alshareef, K. choi, C.S.Park, K.Freeman, M.M.Hussain, G.Bersuker, H.R.Harris, P. Majhi, R.Choi, P. Lysaght, B.H.Lee, H.-H Tseng, R.Jammy, T. S. Boscke, D. J. Lichtenwalne, Electrochem. Soc. Transaction, 19(1), p.269, 2009, Invited.

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228

International
"Dielectric Breakdown Characteristics of Stacked High-k Dielectrics" B.H.Lee, R.Choi, Electrochem. Soc. Transaction (ECS), San Francisco, 19(2), p.289, 2009, Invited.

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227

International
"Reliability characterization methods for MOSFETs with metal electrode/high-k dielectric stack" B.H.Lee, Proc. of ICICDT, 2009.
226

International
"Exploratory NEMS-CMOS Hybrid Devices for Post CMOS era" B.H.Lee, Proc. of ISTC, Electrochem. Soc. Transaction, 18(1), p.857, 2009, Invited.

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2008
225

International
"Device and Reliability Improvement of HfSiON+LaOx/Metal Gate Stacks for 22nm Node Application" J. Huang, P.D. Kirsch, D. Heh, C.Y. Kang, G. Bersuker, M. Hussain, P. Majhi, P. Sivasubramani, D.C. Gilmer, N. Goel, M.A. Quevedo-Lopez, C. Young, C.S. Park, C. Park, P. Y. Hung, J. Price, H.R. Harris, B .H. Lee, H.-H. Tseng, R. Jammy, Proc. of Int. Electron Device Meeting, p.45, 2008.

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224

International
"A Comprehensive and Comparative Study of Interface and Bulk Characteristics of nMOSETs with La-Incorporated High-k Dielectrics" W.-H. Choi, H.-M. Kwon*, I.-S. Han*, T.-G. Goo*, M.-K. Na*, C.Y. Kang, G. Bersuker, B.H. Lee, Y.H. Jeong, H.-D. Lee, R. Jammy, Proc. of Int. Electron Device Meeting, p.111, 2008.

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223

International
"Breakdown in the metal/high-k gate stack: Identifying the “weak link" in the multilayer dielectric" G. Bersuker, D. Heh, C. Young, H. Park, P. Khanal, L. Larcher, A. Padovani, P. Lenahan, J. Ryan, B. H. Lee, H. Tseng, R. Jammy, Proc. of Int. Electron Device Meeting, p.791, 2008.

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222

International
"The Impact of La-Doping on the Reliability of Low Vth High-k/Metal Gate nMOSFETs under Various Gate Stress Conditions" C.Y. Kang, C.D. Young, J. Huang, P. Kirsch, D. Heh, P. Sivasubramani, H.K. Park, G. Bersuker, B.H. Lee, H.S. Choi, K.T. Lee, Y-H. Jeong, J. Lichtenwalner, A.I. Kingon, H-H Tseng, R. Jammy, Proc. of Int. Electron Device Meeting, p.115, 2008.

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221

International
"Gate stack technology for nano-scale CMOS devices" B.H.Lee, C.S. Park, P. Kirsch, J. Huang, P. Sivasubramani, C.Burham, D.Gilmer, C.Y.Kang, P.Lysaght, G.Bersuker, P.Majhi, R.Harris, H.Tseng and R.Jammy, Int. MRS, Chongging, China, 2008, Invited.
220

International
"Mechanisms of Oxygen and Hydrogen Passivation using High Pressure Post-annealing Processes to Enhance the Performance of MOSFETs with Metal Gate/High-k Dielectric" C.Y. Kang, C.S.Park, H.K.Park, S.C.Song, .R.Choi, B.H.Park, B.Woo, K.T.Lee, J.Lee, H.Hwang, G.Bersuker, B.H.Lee, H.H.Tseng, R.Jammy, Ext. Abs. of Symp. On Solid State Device and Materials, p.22, 2008.
219

International
"Comparison of PECVD and RTCVD CESL Nitride stressor in reliability and performance improvement for high-k/metal gate CMOSFETs" K.T.Lee, C.Y.Kang, S.H.Hong, H.S.Choi, G.B.Choi, J.C.Kim, S.H.Song, R.H.Baek, M.S..Park, S.H..Sagong, S.W.Jung, H.K.Park, H.S.Hwang, B.H.Lee, Y.H.Jeong, Ext. Abs. of Symp. On Solid State Device and Materials, p.362, 2008.
218

International
"Gate stack technology for nano-scale CMOS devices" B.H.Lee, C.S. Park, P. Kirsch, J. Huang, P. Sivasubramani, C.Burham, D.Gilmer, C.Y.Kang, P.Lysaght, G.Bersuker, P.Majhi, R.Harris, H.Tseng and R.Jammy, IWDTF, Tokyo. Japan, 2008, Invited.
217

International
"Reliability characterization of metal electrode/high-k dielectric stacks for 45nm node beyond" B.H.Lee, G. Bersuker, D. Heh, H. Park, C.Y. Kang, C. Young, H. Tseng, Proc. of IWDTF, Tokyo. Japan, 2008, Invited.

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