Conferences 11 페이지 | 포항공대 EESL

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Total 516건 11 페이지

2008
216

International
"Mechanisms Limiting EOT Scaling and Gate Leakage Currents of High-k/Metal Gate Stacks Directly on SiGe and a Method to Enable Sub-1nm EOT" J. Huang, P.D. Kirsch, J. Oh, S.H. Lee, J. Price, P. Majhi, H.R. Harris, D.C. Gilmer, D.Q. Kelly, P. Sivasubramani, G. Bersuker, D. Heh, C. Young, C.S. Park, Y.N. Tan, N. Goel, C. Park, P.Y. Hung, P. Lysaght, K.J. Choi, B.J. Cho, H.-H. Tseng, B.H. Lee, R., Proc. Of Symp. On VLSI Technology, p.92, 2008.

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215

International
"The Effects Of Ge Composition And Si Cap Thickness On Hot Carrier Reliability Of Si/Si1-XGex/Si P-MOSFETS With High-K/Metal Gate" W.-Y. Loh, P. Majhi, S.-H. Lee, J.-W. Oh, B. Sassman, C. Young, G. Bersuker, B.-J. Cho, C.-S. Park, C.-Y. Kang, P. Kirsch, B.-H. Lee, H.R. Harris, H.-H. Tseng, R. Jammy, Proc. Of Symp. On VLSI Technology, p.56, 2008.

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214

International
"A comparative study of reliability and performance of strain engineering using CESL stressor and mechanical strain" K.T. Lee, C.Y. Kang, O.S. Yoo, C.D. Young, G. Bersuker, B.H. Lee, H.-D. Lee, Y.-H. Jeong, Proc. of IRPS, 2008.

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213

International
"Performance and Reliability characterization of the band edge high-k.metal gate MOSFETs withal-doped Hf-silicate gate dielectrics" C.Y. Kang, C.S. Park, D. Heh, C. Young, P. Kirsch, H.B. Park, G. Bersuker, J.-W.Yang, B.H. Lee. J.S.Jur, A.I. Kingon, R.Jammy, Proc. of Int. Rel. Phys. Symp., 2008.
212

International
"Plasma induced damage of aggressively scaled gate dielectric (EOT < 1.0 nm) in metal gate/high-k dielectric CMOSFETs" K.S. Min, C.Y. Kang, O.S. Yoo, B.J. Park, S.W. Kim, C.D. Young, D. Heh, G. Bersuker, B.H. Lee, G.Y. Yeom, Proc. of IRPS, 2008.

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211

International
"New hot-carrier degradation phenomenon in nano-scale floating body MOSFETs" J.-W. Yang, H.R.Harris, C.Y. Kang, C.D. Young, K.T. Lee, H.D. Lee, G. Bersuker, B.H. Lee, H.-H. Tseng, R. Jammy, Proc. of Int. Rel. Phys. Symp., 2008.

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210

International
"Achieving Low Vt ＜-0.3V and Thin EOT ~1.0nm in Gate First Metal/High-k pMOSFET for High Performance CMOS Applications" C. S. Park, G. Bersuker, S. C. Song, H. B. Park, C. Burham, B. S. Ju, C. Park, P. Kirsch, B. H. Lee and R. Jammy, Proc. of VLSI-TSA, 2008.

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209

International
"Physical Characteristics of HfO2 Dielectrics at the Physical Scaling Limit" P. S. Lysaght, J. C. Woicik, M. A. Sahiner, P. D. Kirsch, G. Bersuker, B.-H. Lee and R. Jammy, Proc. of VLSI-TSA, 2008.

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208

International
"Gate First Band Edge High-k/Metal Stacks with EOT=0.74nm for 22nm Node nFETs" J. Huang, P. D. Kirsch, M. Hussain, D. Heh, P. Sivasubramani, C. Young, D. C. Gilmer, C.S. Park, Y. N. Tan, C. Park, H.R. Harris, P. Majhi, G. Bersuker, B .H. Lee, H.-H. Tseng and R. Jammy, Proc. of VLSI-TSA, 2008.

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207

International
"Tunnel Oxide Dipole Engineering in TANOS Flash Memory for Fast Programming with Good Retention and Endurance" Y. N. Tan, H. C. Wen, C. Park, D. C. Gilmer, C. D. Young, D. Heh, P. Sivasubramani, J. Huang, P. Majhi, P. D. Kirsch, B. H. Lee, H. H. Tseng and R. Jammy, Proc. of VLSI-TSA, 2008.

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2007
206

International
"Achieving Band Edge Effective Work Function of Gate First Metal Gate by Oxygen Anneal Processes: Low Temperature Oxygen Anneal (LTOA) and High Pressure Oxygen Anneal (HPOA) Processes" Barnett, C. Y. Kang, P. Lysaght, G. Bersuker, R. Choi, H. K. Park, H. Hwang, B. H. Park, S. Kim, B. H. Lee, SSDM, 2007.
205

International
"PBTI Associated Hot Carrier Characteristics of Nano-scale NMOSFETs with Advanced Gate Stack of Metal Gate/High-k dielectrics" K. T. Lee, C. Y. Kang, R.Choi, S. C. Song, B. H. Lee, O. S. Yoo, H.-D. Lee, Y.-H. Jeong, SISC, 2007.
204

International
"Improved Flash Memory Program and Erase Window with TiO2 Charge Trap Layer and High Temperature Dopant Activation Anneal" Y. N. Tan, C. D. Young, D. Heh, C. Park , P. Sivasubramani, J. Huang, D. C. Gilmer, K. J. Choi, J. Kim, M. J. Kim, P. Majhi, R. Choi, P. D. Kirsch, B. H. Lee, H. H Tseng, R. Jammy, 4th Int. Symp. on Adv. Gate Stack Tech., 2007.
203

International
"Effect of Si cap layer on interface quality and NBTI in Ge-on-si with HfSiO for High Mobility Channel pMOSFETs" O.S. Yoo, J.W. Oh, K.S. Min, C.Y. Kang, K.-T. Lee, M.K. Na, S.C. Song, R. Choi, B. H. Lee e, P. Majhi, H-H Tseng and H.-D. Lee, 4th Int. Symp. on Adv. Gate Stack Tech., 2007.

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202

International
"Aggressively Scaled High-k Gate Dielectric with Excellent Performance and High Temperature Stability for 32nm and Beyond" P. Sivasubramani, P. D. Kirsch, J. Huang, C. Park, Y. N. Tan, D. C. Gilmer, C. Young, R. Harris, S. C. Song, D. Heh, R. Choi, P. Majhi, G. Bersuker, B. H. Lee, H.-H. Tseng, J. S. Jur, D. J. Lichtenwalner, A. I. Kingon, and R. Jammy, Tech. Dig. of IEDM, 2007.

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201

International
"Mechanism of Vfb roll-off in High Work function Metal Gate and Low Temperature Oxygen Incorporation to Achieve PMOS Band Edge Work function" S. C. Song, C. S. Park, J. Price, C. Burham, R. Choi, H. H. Tseng, B. H. Lee, and R. Jammy, Tech. Dig. of IEDM, 2007.

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200

International
"Flexible, simplified CMOS on Si(110) with Metal Gate/High-k for HP and LSTP" H. R. Harris, S. E. Thompson, S. Krishnan, P. Kirsch, P. Majhi, C. E. Smith, M. M. Hussain, G. Sung, S. C. Song, R. Choi, H. Adhikari, S. Suthram, B. H. Lee, H. -H. Tseng, R. Jammy, Tech. Dig. of IEDM, 2007.

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199

International
"The effect of high pressure post metallization annealing in dilute oxygen ambient on effective work function of metal gate" J.-M. Lee, H. Park, M. Hasan, M.Jo, M. Chang, R. Choi, B. H. Lee, H. Hwang, SISC, 2007.
198

International
"A Comparative Study of NMOSFETs with HfLaSiON and HfLaON" W.-H.Choi, I.-S. Han, H.-M. Kwon, T.-G. Goo, M.-K. Na, H.-S. Joo, O.-S. Yoo, G-W Lee, C. Y. Kang, R. Choi, S.C. Song, B. H. Lee, R. Jammy, Y.-H. Jeong and H.-D. Lee, 4th Int. Symp. on Adv. Gate Stack Tech., 2007.
197

International
"Band Edge Effective Work Function of Ru Based Metal Gate Electrode for pMOSFET" C. S. Park, S. C. Song, G. Bersuker, H. B. Park, C. Burham, B. H. Lee, and R. Jammy, 4th Int. Symp. on Adv. Gate Stack Tech., 2007.
196

International
"Metal Gate Induced Strain Engineering for High-k/Metal Gate MOSFETs" M. M. Hussain, C. Smith,S. C. Song, B. H. Lee, R. Jammy,, 4th Int. Symp. on Adv. Gate Stack Tech., 2007.
195

International
"Smart” TDDB Algorithm for Investigating Degradation in High-k Gate Dielectric Stacks under Constant Voltage Stress" C. Young, G. Bersuker, J. Tun, R. Choi, D. Heh, and B. H. Lee, 4th Int. Symp. on Adv. Gate Stack Tec, 2007.

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194

International
"Effects of O2 Plasma Treatment on the Reliabilities of Metal Gate/High-k Dielectric MOSFETs" K.T. Lee, C.Y. Kang, R. Choi, S.C. Song, B. H. Lee, H.-D. Lee and Y.-H. Jeong, SSDM, 2007.
193

International
"nMOSFET Reliability Improvement attributed to the Interfacial Dipole formed by La Incorporation in HfO2" C. Y. Kang, P. Kirsch, D. Heh, C. Young, P. Sivasubramani, G. Bersuker, S. C. Song, R. Choi, B. H. Lee, J. Lichtenwalner, J. S. Jur, A. I. Kingon, R. Jammy, SSDM, 2007.
192

International
"High and low stress voltage instabilities in high-k gate stacks" G. Bersuker, C. Young, D. Heh, R. Choi, B. H. Lee and R. Jammy, ECS Trans., 2007.

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191

International
"Integration Challenges and Opportunities for Nanometer Scale Dual Metal Gate CMOSFET" S. C. Song, M. Hussain, J. Barnett, C. S. Park, C. Park, P. Kirsch, and B. H. Lee, ECS Trans., 2007.

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190

International
"Electrical Characterization Methodologies for the Assessment of High-k Gate Dielectric Stacks" C.D. Young, G. Bersuker, D. Heh, R. Choi, C.Y. Kang, J. Tun, and B. H. Lee, ECS Trans., 2007.

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189

International
"Determination of Strain in the Silicon Channel Induced by a Metal Electrode" H.C. Floresca, J. Wang, M. Kim, J. Kim, C.Y. Kang, R. Choi, S.C. Song, H.H. Tseng, B. H. Lee, R. Jammy, Microscopy and Microanalysis 2007 Meeting, 2007.

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188

International
"Band-Engineered Low PMOS VT with High-K/Metal Gates Featured in a Dual Channel CMOS Integration Scheme" H. Rusty Harris, P. Kalra, P M.ajhi, M. Hussain, D. Kelly, J. Oh, D. Heh, C. Smith, J. Barnett, P.D. Kirsch, G. Gebara, J. Jur, D. Lichtenwalner, A. Lubow, T.P. Ma, G. Sung, S. Thompson, B. H. Lee, H.-H. Tseng and R. Jammy, Symp. on VLSI Tech, 2007.

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187

International
"Highly Manufacturable MoAlN PMOS Electrode for 32nm Low Standby Power Applications" H.-C. Wen, S.C. Song, C.S. Park, C. Burhamn, G. Bersuker, O. Sharia, A. Demkov, B. S. Ju, M. A. Quevedo-Lopez., H. Niimi, K. Choi, H. B. Park, P. S. Lysaght, P.Majhi, B. H. Lee and R. Jammy, Symp. on VLSI Tech, 2007.

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