Conferences 1 페이지 | 포항공대 EESL

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Total 8건 1 페이지

1999
8

International
"High-k dielectrics" W.-J. Qi, B. H. Lee, R. Nieh, L. Kang, Y. Jeon, K. Onishi, and J.C. Lee, Proc. SPIE Int. Soc. Opt. Eng., 1999.
7

International
"MOSCAP and MOSFET characteristics using ZrO2 gate dielectric deposited directly on Si" W. Qi, R. Nieh, B. H. Lee, L. Kang, Y. Jeon, K. Onishi, T. Nagai, S. Banerjee, and J. C. Lee, Tech. Dig. of Int. Electron Device Meetings, 1999.

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6

International
"Ultrathin hafnium oxide with low leakage and excellent reliability for alternative gate dielectric applications" B. H. Lee, L. Kang, W. Qi, R. Nieh, K. Onishi, and J. C. Lee, Tech. Dig. of Int. Electron Device Meetings, 1999.

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5

International
"Electrical characteristics of ultra-thin hafnium oxide gate dielectric" B. H. Lee, L. Kang, W. Qi, R. Nieh, Y. Jeon, and J. C. Lee, Discussed at 30th IEEE SISC, 1999.
4

International
"Highly reliable thin Hafnium oxide gate dielectric" L. Kang, B. H. Lee, W. Qi, Y. Jeon, R. Nieh, S. Gopalan, and J. C. Lee, Proceedings of MRS Fall Meeting, 1999.
3

International
"A study on Hysteresis Effect of Barrium Strontium Titanate Thin Films for Alternative Gate Dielectric Application" W. Qi, K. Zawadzki, R. Nieh, Y. Jeon, B. H. Lee, A. Lucas, L. Kang, and J. Lee, Proceedings of MRS Fall Meeting, 1999.
2

International
"Study on ZrO2 deposited on Si as an alternative gate dielectric material" W. Qi, R. Nieh, B. H. Lee, L. Kang, Y. Jeon, K. Onishi and J.C. Lee, MRS Fall Meeting, 1999.
1

International
"Nitrogen implantation to suppress growth of interfacial oxide in MOCVD BST and sputtered BST films" R. Nieh, W.-J. Qi, Y. Jeon, B. H. Lee e, A. Lucas and J. C. Lee, MRS spring meeting, 1999.

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