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Total 3건 1 페이지

2001
3

International
"Effects of Hf and Zr implanted into Si substrates on the electrical properties of MOS devices" C.S. Kang, L.Kang, B. H. Lee, Y. Jeon, W. Qi, R. Nieh, K.Onishi, S. Gopalan, R. Choi, E. Dharmarajan, and J. C. Lee, AIP conference, 2001.
2

International
"High-quality ultrathin HfO2 gate dielectric MOSFETs with TaN electrode and nitridation surface preparation" R. Choi, C.S.Kang, B. H. Lee, K.Onishi, R.Nieh, S.Gopalan, E.Dhamarajan, and J.C.Lee, Proceeding of Symposium VLSI Technology, 2001, Highlight session paper.

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1

International
"High-K Gate Dielectrics: ZrO2, HfO2, and Their Silicates" J.C. Lee, R. Nieh, B. H. Lee, L. Kang, K. Onishi, Y. Jeon, E. Dharmarjan, S. Gopalan, C.S. Kang, and R. Choi, ECS symposium on Gate Stacks for Nanoscale CMOS I, 2001, invited.

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