Kim, Seung-Mo (S.M.Kim)

Ph.D Course

82-54-279-5422

Education

2021 – present : Ph.D Course, Electrical Engineering, POSTECH

2017 – 2021 : Ph.D Course, Dept. of Material Science and Engineering, Gwangju Institute of Science and Technology (GIST)

2015 – 2017 : M.S., Dept. of MSE, Gwangju Institute of Science and Technology (GIST)

2011 – 2015 : B.S., Dept. Electrical Engineering and Computer Science Concentration, GIST

Research Interest

Electrical characterization method for semiconductor devices

Electrical characterization for Graphene FET

Publication

Journals

S.M.Kim, H.I.Lee, Y.S.Lee, S.Y.Kim, T.J. Yoo, S.W.Heo, S.C.Kang, H.J.Hwang, B.H.Lee*, "Non-destructive Analysis of physical defects in a graphene channel using Amplitude Modulated Discharge Current," Submitted to Nature Electronics (2021).


H.J. Hwang, S.K. Lee, S.M. Kim, B.H. Lee*, " Direct measurement of transient charging and dipole alignment speed in Ferroelectric Hf0.5Zr0.5O2 gate dielectric using graphene FETs," Submitted to Nature Communications (2021)


S.Y.Kim, K.Y.Kim, A.R Kim, H.I.Lee, Y.S. Lee, S.M.Kim, H.W.Lee, H.J.Hwang and B.H. Lee*, "Operation principles of ZnO/Al2O3-AlDMP/ZnO channel ternary thin film transistor," Submitted to Science Advances (2021).


S.C. Kang, H.W. Jung, S.J. Chang, S.M. Kim, S.K. Lee, B.H.Lee, H.C. Kim, Y.S. Noh, S.H. Lee, S.I. Kim, H.K. Ahn, J.W. Lim, "Quantitative defect density extraction method for Metal–Insulator–Metal Capacitor," Nanomaterials 10(11), p.2116 (2020).


S.C.Kang, S.K.Lee, S.M.Kim, H.J.Hwang, and B.H. Lee*, "Quantitative defect density extraction method for Metal–Insulator–Metal Capacitor," Semiconductor Science and Technology 35(11), p.115025 (2020).


H.I.Lee, J.S.Park,Y.J.Kim, S.W.Heo, J.W.Hwang, S.M.Kim, K.Kim, Y.S.Lee, J.W.Jung, H.B.Kim, K.J.Cho, M.M.Sung, B.H.Lee*, "Dynamic band alignment modulation of ultrathin WOx/ZnO stack for high on-off ratio field-effect switching applications,”  Nanoscale 12(32), p.16755(2020).


S.Y.Kim, J.A. Ryou, M.J. Kim, K.Y.Kim, Y.S.Lee, S.M.Kim. H.J.Hwang, Y.H.Kim, B.H.Lee*, "Performance degradation in graphene-ZnO barristors due to graphene edge contact," ACS Applied Materials and Interfaces 12(25), pp.28768-28774 (2020).


H.J.An, H. Hong, Y.R.Jo, J.M.Lee, H.J.Yoon, S.Y. Kim, J.S. Song, S.Y. Jeong, B.H.Lee, B.J.Kim, S.G.Jung, T.S.Park, S.M.Kim, C.W.Bark, S.W.Kim, T.Y. Koo, K.T.Ko,, B.J.Kim, S.H.Lee, "Reversible magnetoelectric switching in multiferroic three-dimensional nanocup heterostructure films,” NPG Asian Materials, 11(68), 1-10, (2019).


S.W.Heo, M.G. Gwon, C.H. Kim, S.M. Kim, Y.S. Lee, K.E. Chang and B.H. Lee*, "Tunable AC/DC converter using graphene-germanium barristor based half-wave rectifie,” AIP Advances 9(9), 095009, (2019).


S.C. Kang, S.M. Kim, U.J. Jung, Y.H. Kim, W.J. Park, B.H. Lee*, "Interface state degradation during AC Positive Bias Temperature Instability Stress,”  Solid State Electronics 158, pp.46-50(2019).


S.W. Heo, S.M. Kim, K.Y. Kim, H.J. Lee, S.Y. Kim, Y.J. Kim, S.M. Kim, H.I. Lee, S.G. Lee, K.R. Kim, S.H. Kang, B.H. Lee*, "Ternary full adder using multi-threshold graphene barristor," IEEE Electron Device Letters 39(12), p.1948 (2018).


S.W.Heo, H.I.Lee, H.J. Lee, S.M. Kim, K.Y. Kim, Y.J. Kim, S.Y.Kim, J.H.Kim, M.H. Yoon, B.H.Lee*, “Very low-temperature integrated complementary graphene barristor based inverter for thin film transistor applications," Annalen der Physik ,530(10), p.1800224 (2018).


J.S. Song, M.J. Seo, T.H. Lee, Y.R. Jo, J.M. Lee, T.M. Kim, S.-Y. Kim, S.M. Kim, S.Y. Jeong, H.J. An, S.K. Kim, B.H. Lee, D.H. Lee, H.W. Jang, B.J. Kim, S.H. Lee, “ Tailoring crystallographic orientations to substantially enhance charge separation efficiency in anisotropic BiVO4 photoanodes,” ACS Catalysis, 8(7), p. 5952 (2018).


S.C. Kang, D.H. Lim, S.K. Lim, J.W. Noh, S.M. Kim, S.K. Lee, C.H. Choi, and B.H. Lee*, “Unique reliability characteristics of fully depleted silicon-on-insulator tunneling FET," In press,  Jpn. J. Appl. Phys., 57(4), 05FB02 (2018).


Y.J. Kim, S.M. KIm, S.W. Heo, H.J. Lee, H.I. Lee, K.E. Chang, B.H. Lee*, "High-pressure and low-temperature oxidation of Al2O3 for performance enhancement of graphene field-effect-transistors ," Nanotechnology 29,055202 (2018).


J. Noh, S.M. Kim, S. Heo, S.C. Kang, Y.G. Lee, H.K. Park, S.K. Lee, B.H. Lee*, “Time Domain Reflectometry Analysis of the Dispersion of Metal-Insulator-Metal Capacitance," IEEE Electron Device Letters  38, 4, p.521-524 (2017).


Y.H.Kim, S.C.Kang,  S.K.Lee, U.J.Jung, S.M. Kim, B.H.Lee*, “ Hot carrier instability of nMOSFETs under Pseudo Random Bit Sequence stress ," IEEE Electron Device Letters 37(4), pp.366 (2016).


Y.S.Park, S.M.Kim, H.S.Jeong, C.G.Kang, J.S.Park, H.Song, R.Lee, N.S.Myoung, B.H.Lee, S.Seo, J.T.Kim, G.Y.Jung, “Palladium-decorated Hydrogen Gas Sensors Using Periodically Aligned Graphene Nanoribbons", ACS Applied Materials and Interfaces, 6(15), p.13293 (2014).

Conferences

H.W.Lee, S.Y.Kim, H.I.Lee, Y.S.Lee, S.M.Kim, H.J.Hwang and B.H.Lee*, “Study on the stability of SnO2 stack channel ternary device”, NANO KOREA, (2022).


H.J.Hwang, S.M.Kim, B.H.Kang, K.S.Kim, R.H.Baek, B.H.Lee*, “R-G-B CW laser annealing for Si Source/drain activation”, NANO KOREA, (2022).


김승모, 이준호, 이용수, 이호인, 김시현, 권희진, 이해원, 황현준, Surajit Some, 이병훈, "저온 성장된 ZrO2 MIM 커패시터의 전기적 특성 향상 방법에 관한 연구", The 29th Korean Conference of Semiconductors (KCS), (2022)


이준호, 김승모, Muhammad Taqi, 이호인, 이용수, 권민규, 이해원, 황현준, 유원종, 이병훈, "2D 물질 기반 band modulation FET의 전기적 특성에 관한 연구", The 29th Korean Conference of Semiconductors (KCS), (2022)


Ho-In Lee, So-Young Kim, Seung-Mo Kim, Yongsu Lee, Hae-Won Lee, Heejin Kwon, Junho Lee, Hyeon Jun Hwang, and Byoung Hun Lee, "Performance merits of scaled ZnO Stacked Nanosheet Channel Ternary Field Effect Transistor", The 29th Korean Conference of Semiconductors (KCS), (2022)


이해원, 김소영, 이호인, 이용수, 김승모, 황현준, 이병훈, "SnO2 삼진 로직 소자 제작 및 시간에 따른 소자 안정성 연구", The 29th Korean Conference of Semiconductors (KCS), (2022)


이용수, 김승모, 김기영, 김소영, 이호인, 권희진, 이해원, 황현준, 이병훈, "전류 증폭/억제를 이용한 이중 채널 P형 삼진 소자", The 29th Korean Conference of Semiconductors (KCS), (2022)


권희진, 이용수, 김승모, 이준호, 김시현, 권민규, 황현준, 이병훈, "Polymer electret을 이용한 DNTT 기반의 비휘발성 OFET 메모리", The 29th Korean Conference of Semiconductors (KCS), (2022)


S.M. Kim, T.M.H. Nyugen, J.W. Oh, Y.S. Lee, S.C. Kang, H.I. Lee, C.H. Kim, S. Some, H.J. Hwang and B.H. Lee*, "Drastic reliability improvement using H2O2/UV treatment of HfO2 for heterogeneous integration", IEEE International Reliability Physics Symposium (IRPS), (2021).


Y.S.Lee, S.M.Kim, H.I.Lee, S.Y.Kim, C.H.Kim, H.J.Hwang, and B.H.Lee*, "Low Temperature and Parameter Controllable ZnO-DNTT Antiambipolar Transistor and Its Ternary Application" Int. Conf. on Electronic Materials and Nanotechnology for Green Environment (ENGE), (2020).


S.Y.Kim, S.R.Lee, S.M.Kim, Y.S.Lee, H.I.Lee, H.W.Lee, K.Kim, H.J.Hwang, and B.H.Lee*, "A study on the electrical characteristic of ultra-thin oxide semiconductor field-effect transistor" Int. Conf. on Electronic Materials and Nanotechnology for Green Environment (ENGE), (2020).


S.M.Kim, H.I.Lee, S.Y.Kim, Y.S.Lee, H.J.Hwang, and B.H.Lee*, "A Study on the Degradation Mechanism of Vertical Stacked ZnO TFT" Int. Conf. on Electronic Materials and Nanotechnology for Green Environment (ENGE), (2020).


H.I.Lee, Y.S.Lee, S.M.Kim, S.Y.Kim, H.J.Hwang, and B.H.Lee*, "Demonstration of frequency doubler using ZnO-DNTT antiambipolar transistor with high peak-to-valley ratio (>106)," Int. Conf. on Electronic Materials and Nanotechnology for Green Environment (ENGE), (2020).


H.W.Lee, S.Y.Kim, S.M.Kim, H.I.Lee, Y.S.Lee, H.J.Hwang and B.H.Lee*, "A study on the atomic layer deposited tin oxide channel for thin film transistor", NANO KOREA, (2020).


Y.S.Lee, H.J.Kwon, H.I.Lee, S.Y.Kim, S.M.Kim, K.Kim, H.W.Lee, H.J.Hwang and B.H.Lee*, "Electrical performance of p-type ternary logic device and its circuit application", NANO KOREA, (2020).


S.Y.Kim, K.Kim, A.R.Kim, H.I.Lee, Y.S.Lee, S.M.Kim, H.W.Lee, H.J.Hwang and B.H.Lee*, "Electrical performance of stack channel ternary logic device depending on the carrier concentration of ZnO", NANO KOREA, (2020).


M.H.Nguyen, S.M.Kim, H.J.Hwang and B.H.Lee*, "A study of enhancement electrical properties of high-k dielectric grown at low temperature", NANO KOREA, (2020).


이용수, 김채은, 김소영, 김시현, 이호인, 김승모, 김기영, 황현준, 이병훈, "삼진상보보완회로를 위한 그래핀 기반의 P-type 삼진 로직 소자", The 27th Korean Conference of Semiconductors (KCS), (2020)


김승모, 김소영, 이호인, 이용수, 유태진, 김시현, 황현준, 이병훈, "화학적 토핑 방법을 이용한 그래핀 일함수 조율의 전기적 특성 분석", The 27th Korean Conference of Semiconductors (KCS), (2020)


이호인, 김소영, 김승모, 이용수, 황현준, 이병훈, "Implementation of pseudo n-type ternary analog to digital converter using ZnO nanosheet stack channel field-effect-transistor", The 27th Korean Conference of Semiconductors (KCS), (2020)


김시현, 유태진, 권민규, 이용수, 김승모, 황현준, 이병훈, "MOS 커패시터가 내장된 그래핀/Ge 쇼트키 접합 광소자", The 27th Korean Conference of Semiconductors (KCS), (2020)


Seung-Mo Kim, Yongsu Lee, Sunwoo Heo, Ho-In Lee, Min Gyu Kwon, Hyeon Jun Hwang, and Byoung Hun Lee, "Pure physical defects formation using AFM lithography on graphene channel", NANO KOREA,  (2019)


Yongsu Lee, Chaeeun Kim, So-Young Kim, Kiyung Kim, Seung-Mo Kim, Sunwoo Heo, Ho-In Lee, Cihyun Kim, Hyeon Jun Hwang, and Byoung Hun Lee, "Structural improvement of DNTT graphene barristor by vertical drain electrode", Nano Korea, (2019)


Ho-In Lee, Sunwoo Heo, Seung-Mo Kim, Yongsu Lee,  Nguyen van Long, Hyeon Jun Hwang, Myung Mo Sung and Byoung Hun Lee, "Implementation of pseudo-n type ternary logic circuits using double stacked ZnO composite nanolayer Field-Effect-Transistors ", Nano Korea, (2019)


So-Young Kim, Sunwoo Heo, Kiyung Kim, Myungwoo Son, Seung-Mo Kim, Ho-In Lee, Yongsu Lee, Hyeon Jun Hwang, Moon-Ho Ham, Byoung Hun Lee, "Demonstration of ternary devices and circuits using dual channel graphene barristors", IEEE International Symposium on Multiple-Valued Logic (ISMVL), (2019)


김민재, 김소영, 이용수, 김승모, 이병훈, "Edge Contact Length가 그래핀-ZnO 배리스터에 미치는 전기적 특성 분석", The 26th Korean Conference on Semiconductors (KCS), (2019)


김채은, 김승모, 허선우, 이용수, 김기영, 김민범, 이병훈, "유기물 반도체 두께에 따른 그래핀/DNTT 배리스터의 전기적 특성 변화 분석", The 26th Korean Conference of Semiconductors (KCS), (2019)


김민범, 허선우, 이호인, 김승모, 김채은, 민성욱, 이병훈, "게이트 유전체에 따른 그래핀-ZnO 배리스터의 전기적 특성 분석", The 26th Korean Conference of Semiconductors (KCS), (2019)


이용수, 김승모, 김소영, 이호인, 허선우, 이병훈, "그래핀 성장 조건에 따른 그래핀/구리 배선의 전자이주현상 변화", The 26th Korean Conference on Semiconductors (KCS), (2019)


Sunwoo Heo, Kiyung Kim, Ho-In Lee, Yongsu Lee, Seung-Mo Kim, Hyeon Jun Hwang, Byoung Hun Lee, "Graphene barristor based rectifier for dc level shift", Nano Convergence Conference (NCC), (2019) Best poster award.


김기영, 허선우, 이호인, 김승모, 김채은, 이린, 황현준, 성명모, 이병훈, "회로 설계 관전에서의 삼진 논리 소자 최적화 방향 제시", Nano Convergence Conference (NCC), (2019)


Sunwoo Heo, Kiyung Kim, Seung-Mo Kim, Ho-In Lee, Hyeji Lee, So-Young Kim, Byoung Hun Lee, "Insight for optimization of graphene barristor based devices and circuits", Int. Conf. on Electronic Materials and Nanotechnology for Green Environment (ENGE), (2018)


Kiyung Kim, Sunwoo Heo, Sunmean Kim, Seung Mo Kim, Ho-In Lee, Billal Allouche, Seokhyeong Kang, Byoung Hun Lee, "Multi-threshold graphene barristor for standard ternary inverter", Int. Conf. on Electronic Materials and Nanotechnology for Green Environment (ENGE), (2018)


So-Young Kim, Yongsu Lee, Jae Young Jeong, Seung-Mo Kim, Byoung Hun Lee, "Improvement in Electrical Characteristic of ZnO-graphene Barristor by Edge Contact Length Controlling", Int. Conf. on Electronic Materials and Nanotechnology for Green Environment (ENGE), (2018) Best poster award.


Seung-Mo Kim, Sunwoo Heo, Ho-In Lee, Yongsu Lee, So-Young Kim, Tae Jin Yoo, Byoung Hun Lee, "Schottky barrier height extraction of p-type semiconductor barristor", Int. Conf. on Electronic Materials and Nanotechnology for Green Environment (ENGE), (2018)


Yongsu Lee, Sunwoo Heo, Hyeon Jun Hwang, Ho-In Lee, Seung-Mo Kim, Tae Jin Yoo, Byoung Hun Lee, "Nano‐Electro‐Mechanical(NEM) switch and Schmitt trigger application using multilayer graphene", Int. Conf. on Electronic Materials and Nanotechnology for Green Environment (ENGE), (2018)


Seung Mo Kim, Sunwoo Heo, Hyeji Lee, Ho In Lee, Kiyung Kim, Yun Ji Kim, So-Young Kim, Billal Allouche, and Byoung Hun Lee, “Vth control in p-type graphene barristor using a polymer doping process”, Int. Conf. on Solid State Device and Materials (SSDM), (2018)


Yongsu Lee, So-Young Kim, Seung Mo Kim, Kyoung Eun Chang, Ho-In Lee, Sunwoo Heo, Byoung Hun Lee, "Contact resistance properties for Nickel-n-type Silicon using graphene interlayer", Nano Korea, (2018).


Sunwoo Heo, Seung Mo Kim, Kyoung Eun Chang, Ho-In Lee, Kiyung Kim, Tae Jin Yoo, So-Young Kim, Yongsu Lee, Byoung Hun Lee, "Impact of charged impurities on graphene barristor", Nano Korea, (2018).


S. Y. Kim, H. J. Lee, S. M. Kim, K. Y. Kim, K. E. Chang, S. K. Lee, H. J. Hwang, S. Heo, B. H. Lee, "Device applications of chemically doped graphene," Silicon Nanoworkshop (SNW), (2018).


S.C. Kang, S. K. Lee, S. Heo, S. M. Kim, S. K. Lim and B. H. Lee, “Reliability characteristics of MIM capacitor studied using delta C-F characteristics,” to be presented at Int. Rel. Phys. Symp., (2018).


김기영, 허선우, 김소영, 이혜지, 김윤지, 이호인, 김승모, 이병훈, "간단한 그래핀 패턴을 이용한 저항 제작 및 특성 연구", The 25th Korean Conference on Semiconductors (KCS), (2018)


김승모, 강수철, 임성관, 허선우, 이호인, 이용수, 이병훈, "동작 메커니즘에 기반한 Tunnel FET의 신뢰성 측정법에 관한 연구", The 25th Korean Conference on Semiconductors (KCS), (2018)


이호인, 허선우, 김시현, 김윤지, 김승모, 김기영, 이용수, 이혜지, 이병훈, "ZnO:N-그래핀 접합 배리서터의 TiO2 층 페시베이션 효과", The 25th Korean Conference on Semiconductors (KCS), (2018)


허선우, 이호인, 김기영, 이영곤, 박호경, 이석규, 김승모, 노진우, 이병훈, "DRAM의 센싱 margin 개선을 위한 MIM capacitor 의 주파수분산특성연구", The 25th Korean Conference on Semiconductors (KCS), (2018)


S. Heo, Y. J. Kim, K. J. Han, K. Y. Kim, H. I. Lee, S. M. Kim, S. K. Lee, K. E. Chang, J. H. Kim, M. H. Yoon, and B.H.Lee, “Low temperature integrated complementary graphene barristor to overcome the thermal budget in monolithic 3D integration”, 48th IEEE Semiconductor Interface Specilaists Conference (SISC), (2017)


S. C. Kang, S. K. Lee, J. Noh, S. Heo, S. M. Kim, S. K. Lim, and B. H. Lee, “Frequency dependent capacitance due to the stress polarity dependent defects in Metal/high- dielectric/Metal capacitor”, 48th IEEE Semiconductor Interface Specilaists Conference (SISC), (2017)


Soo Cheol Kang, Sang Kyung Lee, Jinwoo Noh, Seung-Mo Kim, Sung Kwan Lim, and Byoung Hun Lee, “Stress injection polarity dependent asymmetric trap generation in MIM capacitors”, Int. Workshop on Dielectric Thin Films (IWDTF), (2017).


Soo Cheol Kang, Donghwan Lim, Sung Kwan Lim, Jinwoo Noh, Seung-Mo Kim, Sang Kyung Lee, Changhwan Choi, and Byoung Hun Lee, “Effect of high pressure annealing on the reliability of FDSOI tunneling FET”, Int. Conf. on Solid State Device and Materials (SSDM), (2017)


이용수, 황현준, 노진우, 김승모, 유지애, 이병훈, "다층그래핀을 이용한 재구성형 나노스케일 기계적 스위치", The 24th Korean Conference on Semiconductors (KCS), 2017


강수철, 노진우, 임동환, 김승모, 임성관, 최창환, 이병훈, "H2 Annealing에 의한 Tunnel FET Inverter의 전기적 특성 변화", The 24th Korean Conference on Semiconductors (KCS), 2017


김승모, 정욱진, 임성관, 강수철, 이병훈, "Tunnel FET의 고유한 열화메카니즘에 관한 연구", 23rd Korean Conference on Semiconductors(KCS), 2016


강수철, 김용훈, 정욱진, 박우진, 김승모, 이병훈, "FinFET의 Bipolar AC Stress에 의한 Reliability 특성", 23rd Korean Conference on Semiconductors(KCS), 2016, Best poster award.


U. Jung, S.M. Kim, D. Lim, K.E. Chang, Y.J. Kim, S.C. Kang, S.K. Lim, C. Choi and B.H. Lee, “Mechanism of subthreshold swing degradation in p-type tunnel FETs", SISC, (2015)

Other Expertise

Technical Skills

Graphene based device fabrication

Si MOSFETs electrical characterization (current –voltage measurement)

Capacitance-Voltage measurement (Agilent 4294)

Charge pumping measurement (pulse generator)

Cryogenic dI-V measurement

Course Work

Master

Semiconductor processing

Lithography process

Nano Materials & Devices

Introduction to mechanics of materials

Theory of Semiconductor process

Device physics for nanoscales solid state physic