Noh, Jinwoo (J.Noh)
- Current affiliation
- 2017 - , SAMSUNG System LSI
since 2010 : Ph.D, Dept. of MSE, GIST
2008 – 2010 : M.S., Department of Electrical Engineering, Korea University
2004 – 2008 : B.S., School of Electrical Engineering, Korea University
- Research Interest
Multiple valued Logic device and circuit simulation
Neuromorphic device modeling and circuit simulation
Emerging device modeling and simulation
Graphene based device modeling (GFET, Barristor)
7 J. Noh, S.M. Kim, S. Heo, S.C. Kang, Y.G. Lee, H.K. Park, S.K. Lee, B.H. Lee*, “Time Domain Reflectometry Analysis of the Dispersion of Metal-Insulator-Metal Capacitance," IEEE Electron Device Letters 38, 4, p.521-524 (2017).
6 Y.J. Kim, S.Y. Kim, J. Noh, C.H. Shim, U.J. Jung, S.K. Lee, K.E. Chang, C. Cho, B.H. Lee*, "Demonstration of Complimentary Ternary Graphene Field Effect Transistors ," Scientific Reports 6, p.39393 (2016).
5 C.Cho, S.K.Lee, J.Noh, W.Park S.C.Lee, Y.G.Lee, H.J.Hwang, M.Ham, B.H.Lee*, "Contact resistance improvement by the modulation of area to peripheral length ratio of graphene contact pattern," Applied Physics Letters, 106(21), p.213107 (2015).
4 S.Park, M.Chu, J.I.Kim, J.Noh, M.Jeon, B.H.Lee, B.Lee, H.Hwang and B.G.Lee, "Electronic system with memristive synapses for pattern recognition," Scientific Reports, 1, 10123 (2015).
3 S.S.Park, M.Siddik, J.Noh, D.S.Lee, J.Y.Woo, K.Moon, B.H.Lee, H.Hwang*, "Nitrogen-treated Memristive Device for Tunable Electronic Synapse", Semiconductor Science and Technology, 29, p.104006 (2014).
2 J.Noh, M.Jo, C.Y.Kang, D. Gilmer, P.Kirsch, R.Jammy, J.C.Lee, B.H.Lee*, "Development of a Semiempirical Compact Model for DC/AC Cell Operation of HfOx-Based ReRAMs", IEEE Elect. Dev. Lett., 34(9), p.1133 (2013).
1 S.S.Park, J.Noh, M.Choo, A.M.Sheri, M.Chang, Y.B.Kim, C.J.Kim, M.Jeon, B.G.Lee, B.H.Lee, H.Hwang, “Nanoscale RRAM-based synaptic electronics: toward a neuromorphic computing device," Nanotechnology , 24, 384009 (2013). (Invited)
국내 19 허선우, 이호인, 김기영, 이영곤, 박호경, 이석규, 김승모, 노진우, 이병훈, "DRAM의 센싱 margin 개선을 위한 MIM capacitor 의 주파수분산특성연구", The 25th Korean Conference on Semiconductors (KCS), (2018)
국제 18 S. C. Kang, S. K. Lee, J. Noh, S. Heo, S. M. Kim, S. K. Lim, and B. H. Lee, “Frequency dependent capacitance due to the stress polarity dependent defects in Metal/high- dielectric/Metal capacitor”, 48th IEEE Semiconductor Interface Specilaists Conference (SISC), (2017)
국제 17 S. Heo, Y. J. Kim, C. H. Kim, S. K. Lee, H. J. Lee, H. J. Hwang, J. Noh, B. H. Lee, "Graphene-ZnO:N Schottky junction based thin film transistor," Silicon Nanoworkshop (SNW), (2017).
국내 16 허선우, 김윤지, 이선규, 노진우, 황현준, 이병훈, "그래핀-ZnO:N 배리스터의 Compact model 설계와 응용", The Korean Society of Semiconductor & Display Technology(KSDT), (2017).
국내 15 이용수, 황현준, 노진우, 김승모, 유지애, 이병훈, "다층그래핀을 이용한 재구성형 나노스케일 기계적 스위치", The 24th Korean Conference on Semiconductors (KCS), 2017
국내 14 강수철, 노진우, 임동환, 김승모, 임성관, 최창환, 이병훈, "H2 Annealing에 의한 Tunnel FET Inverter의 전기적 특성 변화", The 24th Korean Conference on Semiconductors (KCS), 2017
심창후, 서광하, 허선우, 노진우, 김소영, 이병훈, "그래핀 배리스터를 이용한 화소회로 설계", The Korean Society of Semiconductor & Display Technology(KSDT), (2016)
국내 12 심창후, 노진우, 김윤지, 김소영, Khan Abdul Karim, 이병훈, “Complementary Graphene Barristor의 설계", Electronic Materials and Nanotechnology for Green Environment (ENGE), (2015), Best poster award.
국내 11 장경은, 노진우, 심창후, 김소영, 이병훈, “저전력 Barristor 소자 집적 공정 개발과 특성”, 22nd Korean Conference on Semiconductors(KCS), 2015
국내 10 심창후, 노진우, 장경은, 김윤지, 김소영, Abdul Karim Khan, 이병훈, “Graphene Barristor를 이용한 Ternary Inverter”, 22nd Korean Conference on Semiconductors(KCS), 2015
국내 9 노진우, 심창후, 김소영, Abdul Karim Khan, 이병훈, “Cross point array의 sneak path 문제 최소화를 위한 멤리스터 소자특성연구”, 22nd Korean Conference on Semiconductors(KCS), 2015
국제 8 K.E.Chang, U.Jung, T.J.Yoo, J.Noh, B.H.Lee, “Gate-tunable Wide Bandwidth Photodetector using Graphene/Silicon Schottky Contact", Int. Conf. on Electronic Materials and Nanotechnology for Green Environment (ENGE), (2014), Best poster award.
국제 7 C.Cho, S.K.Lee, S.Lee, Y.G.Lee, W.Park, J.Noh, H.J.Hwang, B.H.Lee, “Contact Resistance Modulation using Area to Peripheral Ratio of Graphene Contact", Int. Conf. on Electronic Materials and Nanotechnology for Green Environment (ENGE), (2014).
국제 6 C.H.Shim, J.Noh, K.E.Chang, B.H.Lee, “Design of common source amplifier using a grapheme barristor", Nano Korea, (2014).
국제 5 J.Noh, K.E.Chang, C.H.Shim, S.Y.Kim, B.H.Lee, “Performance prospect of Graphene Barristor with Hgih on-off Ratio (~107)", Proc. of Silicon Nanoworkshop, (2014).
국내 4 장경은, 노진우, 심창후, 이병훈 “Fabrication and Characterization of Barristor for the Future Logic Device Applications”, The 1st Korean Graphene Symposium, (2014).
국제 3 S. Park, A. Sheri, J. Kim, J. Noh, J. Jang, M. Jeon, B. Lee, B. R. Lee, B.H. Lee and H. Hwang, “Neuromorphic Speech Systems using Advanced ReRAM-based Synapse”, Tech. Dig. of Int. Elect. Dev. Meeting, (2013).
국제 2 J. Noh, M. Jo, C. Y. Kang, D. Gilmer, P.Kirsch, R. Jammy, J. C. Lee, B. H. Lee, "Sub-10nm1T-1R Cell Design using HfOx based ReRAM Cell", Proc. of VLSI-TSA, (2013).
국제 1 H.S. Shin, H.J. Hwang, J. Noh, Y.G. Lee, C. Cho, S.K. Lim and B.H. Lee “Fabrication of suspended graphene cantilever using top down process,” Int. Conf. on Electronic Materials and Nanotechnology for Green Environment (ENGE), (2012).
- Other Expertise
2011. 09 ~ 2012.08 – Visiting researcher at UT Austin and SEMATECH
Device modeling (SPICE model, Verilog-A model)
Circuit simulation (SPICE, CADENCE)
- Course Work
Special Topics in The Field of Nanoelectronics
Special Topics in Electronic Devices for Information Technology Application
Research on The Electrical Properties of Materials II
Topics of Semiconductor Device
Special Topics in Nanotechnology
The Synthesis of Engineering and Patent
Special Topics in Analysis Tools
Physics of Thin Films
Post CMOS Hybrid Device Technology
Semiconductor Memory Device
Electrical Characterization for Advanced Nano-scale Devices
Solid State Electrochemistry
Electronic Properties of Materials
Device physics for nanoscale solid state devices
Introduction to Nanofabrication and Nanomanufacturing
Advanced Electrical Characterization Methods for Nano Scale Devices