Lim, Sung Kwan (S.K.Lim)

Ph.D 2010-2018

Current affiliation
2019 - , Iruja, Inc.
Education

2010 – 2018 :   Ph.D, Dept. of Nanobio Materials Electronics, GIST

2009 – 2011 :   M.S., School. of MSE, GIST

2003 – 2009 :   B.S.,  Dept. of EME, Kangwoon University

Research Interest

2D material Tunneling FET

Synthesis of Graphene on Metal substrate using laser annealing

Synthesis of Graphene in low temperature process

Graphitization of SiC using a laser anneal

Publication

Journals

16 D.H.Kim, S.K.Lim, B.Y.Bae, C.K.Kim, S.W.Lee, M.S.Seo, S.Y.Kim, K.M.Hwang, G.B.Lee, B.H. Lee. Y.G.Choi, “Quantitative Analysis of Deuterium Annealing Effect on Poly-Si TFTs  by Low Frequency Noise and DC I-V Characterization," IEEE Trans. on Electron Device 65(4), p. 1640 (2018).

15 S.C. Kang, D.H. Lim, S.K. Lim, J.W. Noh, S.M. Kim, S.K. Lee, C.H. Choi, and B.H. Lee*, “Unique reliability characteristics of fully depleted silicon-on-insulator tunneling FET," In press,  Jpn. J. Appl. Phys., 57(4), 05FB02 (2018).

14 Y.H.Kim, A.R.Kim, G. Zhao, S.Y.Choi, S.C.Kang, S.K.Lim, K.E.Lee, J.C.Park, B.H.Lee, M.G.Hahm, D.H.Kim, J.J.Yun, K.H.Lee, B.J.Cho , "Wafer-Scale Integration of Highly Uniform and Scalable MoS2 Transistors," ACS Applied Materials and Interfaces 9(42), pp. 37146-37153(2017).

13 Y.G.Lee, S.K.Lim, C.G.Kang, Y.J.Kim, D.H.Choi, H.J.Chung, R.Choi, B.H.Lee*, “Origin of the channel width dependent field effect mobility of graphene field effect transistors ," Microelectronic Engineering, v.163, p. 55-59 (2016).

12 B.J. Cho, J.W. Yoon, S.K. Lim, A.R. Kim, S.Y.Choi, D.H. Kim, K.H. Lee, B.H. Lee, H.C. Ko, M.G. Hahm, “Metal decoration effect on gas-sending properties of 2D hybrid structure on flexible substrate," Sensors, 15, 24093 -24913 (2015). (Invited)

11 B.J.Cho, J.W.Yoon, S.K.Lim, A.R.Kim, D.H.Kim, S.G.Park, J.D.Kwon, Y.J.Lee. K.H.Lee, B.H.Lee, H.C.Ko, M.G.Hahm, "Chemical sensing of 2D graphene/MoS2 heterostructure device," ACS Applied Materials and Interfaces 7, p.16775 (2015).

10 U.Jung, Y.G.Lee, C.G.Kang, S.C.Lee, J.J.Kim, H.J.Hwang, S.K.Lim, M.H.Ham, B.H.Lee*, “Quantitatively estimating defects in graphene devices using discharge current analysis method," Scientific Reports 4, 4886 (2014).

9 C.Cho, Y.G.Lee, U.Jung, C.G.Kang, S.K.Lim, H.J.Hwang, H.J.Choi, B.H.Lee*, “Correlation between the hysteresis and the initial defect density of graphene,” Appl. Phys. Lett., 103, p.083110, Aug. (2013).

8 W.Park, J.H.Yang, C.G.Kang, Y.G.Lee, H.J.Hwang, C.Cho, S.K.Lim, S.C.Kang, W.-K Hong, S.K.Lee, S.Lee, and B.H.Lee*, "Characteristics of pressure sensitive touch sensor using piezoelectric PVDF-TrFE/MoS2 stack,” Nanotechnology, 24, 475501 (2013).

7 C.G.Kang, S.K.Lim, S.C.Lee, S.K.Lee,C.Cho, Y.G.Lee, H.J.Hwang, Y.H. Kim, H.J.Choi, S.H.Choe, M.H.Ham and B.H.Lee*, “Effects of Multi-Layer Graphene Capping on Cu interconnects," Nanotechnology, 24, 115707, (2013). , Also selected as article of particular interest.

6 J.W.Yoon, W.Park, G.Y.Bae, Y.H.Kim, H.S.Jang, Y.J. Hyung, S.K.Lim, Y.H.Kahng, W.K.Hong, B.H.Lee, H.C.Ko , "Highly Flexible and Transparent Multilayer MoS2 Transistors with Graphene Electrodes”, Small, 9(19), p.3295 (2013).

5 C.G.Kang, Y.G.Lee, S.K.Lee, E.J,Park, C.Cho, S.K.Lim, H.J.Hwang,H.J.Chung, S.Seo, B.H.Lee*, "Mechanism of the effects of low temperature Al2O3 passivation on graphene field effect transistors", Carbon, 53, p.182-187 (2013).

4 M.H. Choe, C.-Y. Cho, J.-P. Shim, W.J. Park, S.K. Lim, W.-K. Hong, B.H. Lee, D.S. Lee, S.J. Park, and T. Lee, "Au Nanoparticle-decorated graphene electrodes for GaN-based optoelectronic devices", Appl. Phys. Lett. 101, p.031115, Jul. (2012)

3 C.G.Kang, S.K.Lee, Y.G.Lee, H.J.Hwang, C.H.Cho, S.K.Lim, J.S.Heo, H.J.Chung, S.Seo, B.H.Lee*, "Enhanced Current Drivability of CVD Graphene Interconnect in Oxygen-Deficient Environment," IEEE Elec. Dev. Lett. 32(11), p.1591, Sep. 2011.

2 H.J.Hwang, C.H.Cho, S.K.Lim, S.Y.Lee, C.G.Kang, H.Hwang, B.H.Lee*, “Electrical Characteristics of Wrinkle-Free Graphene Formed by Laser Graphitization of 4H-SiC,” Appl. Phys. Lett., 99, 082111 2011., Also, published in Virtual J. of Nanoscale Science and Technology, 24(11), Sep. 2011.

1 B.H.Lee, H.J.Hwang, C.H.Cho, S.K.Lim, S.Y.Lee, and H.Hwang, "Nano-Electromechanical Switch-CMOS Hybrid Technology and Its Applications, " J. Nanoscience and Nanotechnology 11, 1, p.256-261, Jan. 2011.

Conferences

국내 29 김승모, 강수철, 임성관, 허선우, 이호인, 이용수, 이병훈, "동작 메커니즘에 기반한 Tunnel FET의 신뢰성 측정법에 관한 연구", The 25th Korean Conference on Semiconductors (KCS), (2018)

국내 28 강수철, 노진우, 임동환, 김승모, 임성관, 최창환, 이병훈, "H2 Annealing에 의한 Tunnel FET Inverter의 전기적 특성 변화", The 24th Korean Conference on Semiconductors (KCS), 2017

국내 27 김승모, 정욱진, 임성관, 강수철, 이병훈, "Tunnel FET의 고유한 열화메카니즘에 관한 연구", 23rd Korean Conference on Semiconductors(KCS), 2016

국제 26 H.J. Hwang, W.B. You, K.E. Chang, C.H Shim, C. Cho, J.H. Yang, Y.J. Kim, S.K. Lim, W.Park, and B.H. Lee, "Graphene barristor with nitrogen doped ZnO for high on/off ratio and wide barrier height modulation", SISC, (2015)

국제 25 U. Jung, S.M. Kim, D. Lim, K.E. Chang, Y.J. Kim, S.C. Kang, S.K. Lim, C. Choi and B.H. Lee, “Mechanism of subthreshold swing degradation in p-type tunnel FETs", SISC, (2015)

국제 24

H.J. Hwang, K.E. Chang, W.B. You, C.H Shim, S.K. Lee, J.H. Yang, C. Cho, S.K. Lim, W. Park, J. Kim, B.H. Lee, "Barrier height modulation at Graphene-ZnO contact using nitrogen doping", Nano Korea, (2015)


국내 23 박우진, 김용훈, 이상경, 정욱진, 양진호, 조천흠, 김윤지, 임성관, 이병훈, “MoS2 전계효과 트랜지스터의 컨택 저항 개선 방법”, 22nd Korean Conference on Semiconductors(KCS), 2015

국제 22 W.J.Park, Y.H.Kim, S.K.Lee, U.Jung, J.H.Yang, C.Cho, Y.J.Kim, S.K.Lim, I.S. Hwang, H.B.R.Lee, and B.H.Lee, “Contact Resistance Reduction using Fermi Level De-pinning Layer for MoS2 FETs”, Tech. Dig of IEDM, (2014).

국제 21 W.J.Park, Y.H.Kim, S.K.Lee, U.Jung, J.H.Yang, C.Cho, Y.J.Kim, S.K.Lim, and B.H.Lee, “Contact Resistance Reduction for MoS2 FETs with Insulating Layers”, 44th IEEE Semiconductor Interface Specilaists Conference (SISC), (2014).

국제 20 Y.G.Lee, S.K.Lim, C.G.Kang, Y.J.Kim, J.Kim, and B.H.Lee, “Intrinsic mobility of graphene extracted using a modified percolation conduction model,” AVS Texas Chapter Conference, (2014).

국제 19 C.Cho, C.G.Kang, S.K.Lim, M.H.Ham, B.H.Lee, “Direct growth of graphitic layer on Cu wire using KrF laser", Nano Korea, (2014).

국내 18 임성관, 최호준, 이병훈 “Graphene Transfer Process using Critical Point Dryer”, The 1st Korean Graphene Symposium, (2014).

국제 17 W.J. Park, Y.G. Lee, J.J. Kim, S.K. Lee, C.G. Kang, C. Cho, S.K. Lim, U. Jung, W.K. Hong, and B.H.Lee, “Reliability Characteristics of MoS2 FETs”, Int. Conf. on Solid State Device and Materials(SSDM), (2013)

국내 16 강창구, 임성관, 이상철, 이상경, 조천흠, 이영곤, 황현준, 김용훈, 최호준, 최선희, 이병훈, “반도체 배선으로서의 그래핀의 응용”, 20th Korean Conference on Semiconductors(KCS), (2013). Best paper award

국내 15 조천흠, 임성관, 황현준, 강창구, 이영곤, 신희성, 최호준, 황현상, 이병훈, “Properties of Graphene Fabricated using Pulsed Laser Graphitization of Si-face 4H-SiC Substrate”, 20th Korean Conference on Semiconductors(KCS), (2013).

국내 14 박우진, 양진호, 강창구, 조천흠, 이상철, 임성관, 김용훈, 이상경, 강수철, 홍웅기, 이병훈 "Study of touch sensing characteristics in PVDF-TrFE/MoS2 field-effect transistors", presented at 20th Korean Conference on Semiconductors(KCS), 2013.

국제 13 H.S. Shin, H.J. Hwang, J. Noh, Y.G. Lee, C. Cho, S.K. Lim and B.H. Lee “Fabrication of suspended graphene cantilever using top down process,” Int. Conf. on Electronic Materials and Nanotechnology for Green Environment (ENGE),  (2012).

국제 12 C.G. Kang, Y.G. Lee, S.K. Lee, E. Park, C.H. Cho, S.K. Lim, H.J. Hwang, B.H. Lee, "Enhancement of electron conduction and reduction of hysteresis for graphene FET by low temperature ALD Al2O3 Passivation", IEEE SISC, (2011).

국제 11 C. Cho, S.K. Lim, C.G. Kang, Y.G. Lee, H.J. Hwang, E.J. Park, and B.H. Lee, “Electrical Characteristics of Back Gated FET on a Wrinkle Free Graphene Channel,” Ext. Abs. of Solid State Devices and Materials (SSDM), p.38, (2011).

국제 10 E.J Paek, H.J. Hwang, S.K. Lee, C.G. Kang, C.H. Cho, Y.G. Lee, S.K. Lim, and B.H. Lee, “Touch Pressure Sensor using Metal/PVDF-TrFE/Graphene Device,” Ext. Abs. of Solid State Devices and Materials (SSDM), p.1331, (2011).

국제 9 C.Cho, C.G.Kang, Y.G.Lee, H.J.Hwang, S.K.Lee, S.K. Lim, S.Y.Lee, H.Hwang, B.H.Lee, " Electrical Characteristics of Top Gate Graphene FETs on Laser Graphitized 4H-SiC," Silicon Nanoworkshop (SNW), (2011).

국내 8 C.G. Kang, Y.G. Lee, S.K. Lee, H.J. Hwang, C.H. Cho, S.K. Lim, S.Y. Lee, E.J. Park, J. Heo, H.J. Chung, H. Yang, S. Seo and B.H. Lee, "Passivation effects of low temperature ALD Al2O3 gate dielectric for graphene FET", 18th Korean Conference on Semiconductors (KCS), (2011).

국내 7 H.J.Hwang, C.H.Cho, C.G.Kang, S.K.Lim, S.Y.Lee, E.J.Paek, H.Hwang, B.H.Lee, "Top Gate Graphene Field Effect Transistor on MLG/4H-SiC Substrates," 18th Korean Conference on Semiconductors (KCS), (2011).

국제 6 Y.G. Lee, C.G. Kang, S.K. Lee, K.J. Choi, C.H. Cho, H.J. Hwang, S.Y. Lee, S.K. Lim, U.J. Jung, and B.H. Lee, "Characteristics of Very Low Temperature ALD Al2O3 Gate Dielectric for Top Gate Graphene MOSFET Applications", Ext. Abs. of Int. Workshop on Dielectric Thin Film (IWDTF), p.21, (2011).

국제 5 S.K. Lim, C.H.Cho, S.Y. Lee, H.J.Hwang, C.G. Kang, Y.G. Lee, J. Ahn, and B.H. Lee,"Study of the graphene transfer from graphitized SiC substrate", Ext. Abs. of SSDM, pp.591, (2010).

국제 4 B.H. Lee, C.H. Cho, S.K. Lim, S.Y. Lee, H.J. Hwang, Y.G. Lee, U.J. Jung, C.G. Kang, "Feasibility of Wrinkle Free Graphene Process", Abs. of American Vac. Soc. Symposium, Albuquerque, p.61, (2010), Invited

국내 3 C.H.Cho, S.H.,Kim, S.K.Lim, S.Y.Lee, H.J.Hwang, H.Hwang, B.H.Lee, "Carbon condensation and Germanium sublimation in GeC films by pulse laser annealing", 17th Korean Conference on Semiconductors (KCS), (2010).

국내 2 H.J.Hwang, S.K.Lim, S.Y.Lee, C.H.Cho, B.H.Lee, "Simplified analytic model for the scaling limit of nano electro mechanical switch devices", 17th Korean Conference on Semiconductors (KCS), (2010).

국제 1 B.H.Lee, C.H.Cho, H.J.Hwang, S.K. Lim, S.Y. Lee, H.Hwang, "NEMS-CMOS hybrid technology and its applications", NANO Korea, (2009),  Invited.

Other Expertise

Technical Skills

High Pressure anneal

Raman spectroscopy analysis

SEM analysis

Course Work

Master

Electronic Properties of Materials

Semiconductor Processing

Advanced Electrical Characterization Methods for Nano Scale Devices

Fundamentals of Reliability and defects – basics and selected topics

Post CMOS Hybrid Device Technology

Nanoelectronics

Introduction to Nanofabrication andNanomanufacturing

Device physics for nanoscale solid state devices

Ph. D

Physical Chemistry of Materials

Organic Materials for Electronic

Advanced Electron Microscopy

Semiconductor Devices on Single Crystalline and Unconventional Substrate

Solid State Electrochemistry

Introduction to Materials Science and Engineering

Thin Film Process

Entrepreneurship

NT-IT Fusion Technology

Nano Materials & Devices

Semiconductor Processing