포항공대 EESL EESL Fearless challenge

전체메뉴

전체메뉴
CONTACT US
  • LOGIN

    • Lee, Young Gon (Y.G.Lee)

    Ph.D 2010-2014

    Current affiliation
    2015-, SK hynix
    Education

    since 2010 :   Ph.D, Dept. of MSE, GIST

    since 2014 :   Ph.D, Dept. of MSE, UT Dallas (exchange student)

    2008 – 2010 :   M.S., Dept. of MSE, University of Seoul

    2004 – 2008 :   B.S., Dept. of MSE, University of Seoul

    Research Interest

    Electrical characterization method for semiconductor devices

    Gate Stack Technology

    Electrical characterization for hybrid device

    Publication

    Journals

    32 T.J.Yoo, H.J.Hwang, S.C.Kang, S.W.Heo, H.I.Lee, Y.G.Lee, H.K.Park, S.K.Lee and B.H. Lee*, "Direct defect level analysis for Metal-Insulator-Metal Capacitor using Internal Photoemission Spectroscopy," In revision, J. of EDS (2021).

    31 J. Noh, S.M. Kim, S. Heo, S.C. Kang, Y.G. Lee, H.K. Park, S.K. Lee, B.H. Lee*, “Time Domain Reflectometry Analysis of the Dispersion of Metal-Insulator-Metal Capacitance," IEEE Electron Device Letters  38, 4, p.521-524 (2017).

    30 Y.G.Lee, S.K.Lim, C.G.Kang, Y.J.Kim, D.H.Choi, H.J.Chung, R.Choi, B.H.Lee*, “Origin of the channel width dependent field effect mobility of graphene field effect transistors ," Microelectronic Engineering, v.163, p. 55-59 (2016).

    29 U.J. Jung, J.J. Kim, Y.H. Kim, Y.G. Lee, S.C Song, J. Blatchford, B. Kirkpatrick, H.Niimi, B.H.Lee*, “Dipole-Induced Gate Leakage Reduction in Scaled MOSFETs with a Highly Doped Polysilicon/Nitrided Oxide Gate Stack,” Microelectronic Engineering, 142, p.1 (2015).

    28 C.Cho, S.K.Lee, J.Noh, W.Park  S.C.Lee, Y.G.Lee, H.J.Hwang, M.Ham, B.H.Lee*, "Contact resistance improvement by the modulation of area to peripheral length ratio of graphene contact pattern," Applied Physics Letters, 106(21), p.213107 (2015).

    27 S.C.Lee, S.K.Lee, C.G.Kang, C.Cho, Y.G.Lee, U.J.Jung, and B.H.Lee*, "Graphene transfer in vacuum yielding a high quality interface," Carbon, 93, p.286-294 (2015).

    26 Y.H. Kim, Y.G. Lee, U. Jung, J.J. Kim, M.H. Choe, K.T. Lee, S.W. Pae, J.W. Park, B.H.Lee*, "Extraction of Effective Mobility from nMOSFETs with Leaky Gate Dielectric using Time Domain Reflectometry,"  IEEE Trans. Elect. Dev., 62(4), P.1092 (2015).

    25 Y.J.Kim, Y.G.Lee, U.Jung, S.Lee, S.K.Lee, and B.H.Lee*, “A Facile Process to Achieve Hysteresis-free and Fully Stabilized Graphene Field-effect Transistors”, vol.7, 4013-4019, Nanoscale, (2015). Also selected as 2015 Hot Papers in Nanoscale

    24 U.Jung, Y.J.Kim, Y.H.Kim, Y.G.Lee, and B.H.Lee* "Extraction of the Interface State Density of Top Gate Graphene Field Effect Transistors", on-line published, IEEE Electron Device Letters, 36(4), p.408 (2015)

    23 Y.H.Kim, S.H.Baek, C.H.Jeon, Y.G.Lee, J.J.Kim, U.J.Jung, S.C.Kang, W.Park, S.H.Lee, B.H.Lee*, " Leakage current limit of time domain reflectometry in ultra-thin dielectric characterization", Jpn. J. of Appl. Phys. 53, 08LC02, (2014). (Special Issue)

    22 U.Jung, Y.G.Lee, C.G.Kang, S.C.Lee, J.J.Kim, H.J.Hwang, S.K.Lim, M.H.Ham, B.H.Lee*, “Quantitatively estimating defects in graphene devices using discharge current analysis method," Scientific Reports 4, 4886 (2014).

    21 U. Jung, Y.G. Lee, C.G. Kang, S.C Lee, B.H. Lee*, “Quantitative analysis of interfacial reactions at a graphene/SiO2 interface using the discharge current analysis method,” Appl. Phys. Lett. 104, 151604 (2014).

    20 S.C.Lee, O.D. Iyore, S.E. Park, Y.G. Lee, S. Jandgyala, C.G. Kang, Y.H. Kim, M. Q.Lopez, B.E. Gnade, R.M. Wallace, B.H.Lee*, J.Kim, "Rigid substrate process to achieve high mobility in graphene field-effect transistors on a flexible substrate”, Carbon, 68, p.791-797 (2014).

    19 J.J. Kim, M.W.Kim, U.J. Jung, K.E.Chang, S.K.Lee, Y.H.Kim, Y.G. Lee, R.Choi, B.H.Lee*, " Intrinsic time zero dielectric breakdown characteristics of HfAlO Alloys", IEEE Trans. Electron Device, 60(11), p.3683 (2013).

    18 Y.G.Lee, C.G.Kang, C.Cho, Y.H.Kim, H.J.Hwang, B.H.Lee*, “Quantitative analysis of hysteretic reactions at the interface of graphene and SiO2 using short pulse I-V method,” Carbon, 60, p.453-460 (2013).

    17 C.G.Kang, S.K.Lee, S.H.Choe, Y.G.Lee, C.L.Lee, B.H.Lee*, "Intrinsic photocurrent characteristics of graphene photodetector passivated with Al2O3”, Optics Express, 21(20), p.23391 (2013).

    16 H.J. Hwang, J.H. Yang, S.C.Kang, C. Cho, C.G. Kang, Y.G. Lee, B.H.Lee*, “Novel Multi-bit Memory Device Using Metal/PVDF-TrFE/Graphene Stack,” Microelectronics Engineering, 109, p.87-89, Sep. (2013).

    15 C.Cho, Y.G.Lee, U.Jung, C.G.Kang, S.K.Lim, H.J.Hwang, H.J.Choi, B.H.Lee*, “Correlation between the hysteresis and the initial defect density of graphene,” Appl. Phys. Lett., 103, p.083110, Aug. (2013).

    14 W.Park, J.H.Yang, C.G.Kang, Y.G.Lee, H.J.Hwang, C.Cho, S.K.Lim, S.C.Kang, W.-K Hong, S.K.Lee, S.Lee, and B.H.Lee*, "Characteristics of pressure sensitive touch sensor using piezoelectric PVDF-TrFE/MoS2 stack,” Nanotechnology, 24, 475501 (2013).

    13 H.J. Hwang, J.H.Yang, Y.G.Lee, C.Cho, C.G.Kang, S.C.Kang, W.Park, and B.H.Lee*, “Ferroelectric Polymer Gated Graphene Memory with Very High Speed Conductivity Modulation,” Nanotechnology, 24, on-line published (2013). Also selected as a paper of particular interest.

    12 Y.G.Lee, Y.J.Kim, C.G.Kang, C.Cho, H.J.Hwang, U.J. Jung, B.H.Lee*, "Influences of extrinsic factors on the accuracy of mobility extraction for graphene MOSFETs," Appl. Phys. Lett. 102(9), 093121 (2013).

    11 C.G.Kang, S.K.Lim, S.C.Lee, S.K.Lee,C.Cho, Y.G.Lee, H.J.Hwang, Y.H. Kim, H.J.Choi, S.H.Choe, M.H.Ham and B.H.Lee*, “Effects of Multi-Layer Graphene Capping on Cu interconnects," Nanotechnology, 24, 115707, (2013). , Also selected as article of particular interest.

    10 C.G.Kang, Y.G.Lee, S.K.Lee, E.J,Park, C.Cho, S.K.Lim, H.J.Hwang,H.J.Chung, S.Seo, B.H.Lee*, "Mechanism of the effects of low temperature Al2O3 passivation on graphene field effect transistors", Carbon, 53, p.182-187 (2013).

    9 S.K. Lee, C.G.Kang, Y.G.Lee, C.Cho, E.J.Park, H.J.Chung, S.Seo, H.D.Lee, B.H. Lee*, "Correlation of low frequency noise characteristics with the interfacial charge exchange reaction at graphene devices", Carbon, 50(11), p.2046, Sep. 2012.

    8 U. Jung, Y.G.Lee, J.J. Kim, S.K.Lee, I. Mejia, A. Salas-Vwilasenor, M. Quevedo-Lopez, B.H.Lee*, "Indicators of mobility extraction error in bottom gate CdS metal-oxide-semiconductor field-effect transistors", Appl. Phys. Lett., 101, 182106, Nov. (2012)

    7 Y.Kim, Y.G.Lee, M.Kim, C.G. Kang, U.Jung,J.J.Kim, S.C.Song, J. Blatchford, B. Kirkpatrick, H. Niimi, K.Y.Lim, B.H.Lee*, "Capacitance analysis of highly leaky Al2O3 MIM capacitor using time domain reflectometry," IEEE Electron Dev. Lett., 33(9), p. 1303-1305, Jul. 2012.

    6 S.Cimino, A. Padovani, L. Larcher, V.V. Afanas’ev, H.J. Hwang, Y.G. Lee, M. Jurczac, D. Wouters,B.H. Lee, H. Hwang, L. Pantisano, "A study of the leakage current in TiN/HfO2/TiN capacitors ," Microelectronic Engineering, v.95, p.71-73, Jul. 2012.

    5 J.J. Kim, M. Cho, L.Pantisano,Y.G.Lee, U. Jung, T.Chiarella, M. Togo, N.Horiguchi, G.Groeseneken, B.H.Lee*, "Process dependent N/PBTI characteristics of TiN Gate finFET," IEEE Elect. Dev. Lett.,33(7), p.937, Jul. (2012)

    4 B.H.Lee, Y.G.Lee, U.J.Jung, Y.H.Kim, H.J. Hwang, J.J. Kim, C.G.Kang, "Issues with the Electrical Characterization of Graphene Devices," Carbon Letters, Vol. 13(1), Jan. 2012. (Invited)

    3 C.G.Kang, S.K.Lee, Y.G.Lee, H.J.Hwang, C.H.Cho, S.K.Lim, J.S.Heo, H.J.Chung, S.Seo, B.H.Lee*, "Enhanced Current Drivability of CVD Graphene Interconnect in Oxygen-Deficient Environment," IEEE Elec. Dev. Lett. 32(11), p.1591, Sep. 2011.

    2 C. G. Kang, J.W. Kang, S.K. Lee, S.Y. Lee, C.H. Cho, H.J. Hwang, Y.G. Lee, J. Heo, H.-J. Chung, H. Yang, S. Seo, S.-J. Park, K.Y. Ko, J. Ahn and B.H. Lee*, "Characteristics of CVD graphene nanoribbon formed by a ZnO nanowire hardmask,” Nanotechnology, 22, p.295201, May. 2011.

    1 Y.G. Lee, C.G. Kang, U.J. Jung, J.J. Kim, H.J. Hwang, H.J. Jeong, S. Seo, R. Choi, B.H. Lee*, “Fast transient charging at the graphene/SiO2 interface causing hysteretic device characteristics,” Appl. Phys. Lett., 98, 183508, 2011. Also, published in Virtual J. of Nanoscale Science and Technology, 23(20), May 23, 2011.

    Conferences

    국내 44 허선우, 이호인, 김기영, 이영곤, 박호경, 이석규, 김승모, 노진우, 이병훈, "DRAM의 센싱 margin 개선을 위한 MIM capacitor 의 주파수분산특성연구", The 25th Korean Conference on Semiconductors (KCS), (2018)

    국내 43 강수철, 이영곤, 김용훈, 정욱진, 박우진, 김윤지, 이병훈, “FinFET의 AC Stress Reliability 특성”, 22nd Korean Conference on Semiconductors(KCS), 2015

    국내 42 김용훈, 정욱진, 강수철, 이영곤, 이병훈, “TDR 분석법을 이용한 미세전계효과소자의 Effective Moliblity 추출 방법”, 22nd Korean Conference on Semiconductors(KCS), 2015

    국제 41 Y.G.Lee, S.K.Lim, C.G.Kang, Y.J.Kim, J.Kim, and B.H.Lee, “Intrinsic mobility of graphene extracted using a modified percolation conduction model,” AVS Texas Chapter Conference, (2014).

    국제 40 Y.G.Lee, L.Cheng, Y.Kim, G.Mordi, H.J.Hwang, A.Lucero, B.H.Lee, J.Kim, “Development of Low-k Dielectric for Graphene Device”, AVS 61st International Symposium, (2014).

    국제 39 C.Cho, S.K.Lee, S.Lee, Y.G.Lee, W.Park, J.Noh, H.J.Hwang, B.H.Lee, “Contact Resistance Modulation using Area to Peripheral Ratio of Graphene Contact", Int. Conf. on Electronic Materials and Nanotechnology for Green Environment (ENGE), (2014).

    국제 38 Y.J.Kim, S.K.Lee, Y.G.Lee, B.H.Lee, “Influence of O2 Plasma Treatment on Top Gate Graphene Field-effect Transistors", Int. Conf. on Electronic Materials and Nanotechnology for Green Environment (ENGE), (2014).

    국제 37 Y.J.Kim, Y.G.Lee, S.Lee, S.K.Lee, K.E.Chang, B.H.Lee, “Influence of final passivation anneal on top gated graphene field-effect transistors", Nano Korea, (2014).

    국제 36 Y.J.Kim, S.C.Lee, Y.G.Lee, C.G.Kang, B.H.Lee, “Optimized Integration Processes to Achieve Highly Stable CVD Graphene FETs," Proc. of Silicon Nanoworkshop, (2014).

    국내 35 김윤지, 이상철, 이영곤, 강창구, 이병훈 “Improved Stability of CVD Graphene Field Effect Transistor through Optimization Process”, The 1st Korean Graphene Symposium, (2014).

    국내 34 김윤지, 이영곤, 강창구, 정욱진, 이상철, 이상경, 이병훈, “Optimization of Integration Process for Stabilized Graphene MOSFET”, 21st Korean Conference on Semiconductors(KCS), 2014.

    국제 33 U.Jung, J.E.Lee, Y.G.Lee, Y.J.Kim, B.H.Lee*, "Monitoring of interfacial reactions using discharging current from graphene FETs", IEEE SISC, Washington, (2013).

    국제 32 C.G.Kang, S.H.Choe, S.K.Lee, U.Jung, W.Park, Y.G.Lee, T.J.Yoo, and B.H.Lee, “Highly sensitive Al2O3 passivated CVD graphene photodetectors for UV to IR region”, Int. Workshop on Dielectric Thin Films. (IWDTF) , (2013).

    국제 31 U.Jung, J.E. Lee, Y.G. Lee, J.J. Kim, Y.H. Kim, and B.H.Lee*, “Interfacial defects at top gate graphene FETs investigated using a novel discharging current measurement method”, Int. Workshop on Dielectric Thin Films. (IWDTF) , (2013).

    국제 30 Y.H. Kim, S.H.C. Baek, C.H. Jeon, Y.G. Lee, J.J. Kim, U.J. Jung, S.H. Lee, and B.H. Lee, “Characterization of ultra-thin dielectric using time domain reflectometry" Int. Workshop on Dielectric Thin Films. (IWDTF) , (2013).

    국제 29 W.J. Park, Y.G. Lee, J.J. Kim, S.K. Lee, C.G. Kang, C. Cho, S.K. Lim, U. Jung, W.K. Hong, and B.H.Lee, “Reliability Characteristics of MoS2 FETs”, Int. Conf. on Solid State Device and Materials(SSDM), (2013)

    국제 28 B.H. Lee, Y.G.Lee, C.G.Kang, U.J.Jung, S.C.Lee, Y.J.Kim, “Electrical characterization of Graphene Field Effect Transistor”, UKC, (2013), invited.

    국제 27 H.J. Hwang, J.H. Yang, S.C. Kang, C. Cho, C.G.Kang, Y.G. Lee, B.H. Lee, “Novel Multi-bit Memory Device Using Metal/PVDF-TrFE/Graphene Stack," INFOS, (2013).

    국내 26 장경은, 김진주, 김민우, 이상경, 정욱진, 김용훈, 이영곤, 이병훈, “Temperature effect on the intrinsic reliability of HfxAl1-xOy dielectric”, 20th Korean Conference on Semiconductors(KCS), (2013).

    국내 25 정욱진, 김진주, 이재은, 이영곤, 김용훈, 강창구, 장경은, 이병훈, “연속적인 펄스를 이용한 Graphene channel MOSFETs 결함의 전기적 분석방법 연구”, 20th Korean Conference on Semiconductors(KCS), (2013).

    국내 24 이재은, 정욱진, 김진주, 이영곤, 김용훈, 강창구, 장경은, 이병훈, "Majority Carrier 종류에 따른 Graphene channel의 펄스응답전류 특성 분석”,20th Korean Conference on Semiconductors(KCS), (2013).

    국내 23 강창구, 임성관, 이상철, 이상경, 조천흠, 이영곤, 황현준, 김용훈, 최호준, 최선희, 이병훈, “반도체 배선으로서의 그래핀의 응용”, 20th Korean Conference on Semiconductors(KCS), (2013). Best paper award

    국내 22 조천흠, 임성관, 황현준, 강창구, 이영곤, 신희성, 최호준, 황현상, 이병훈, “Properties of Graphene Fabricated using Pulsed Laser Graphitization of Si-face 4H-SiC Substrate”, 20th Korean Conference on Semiconductors(KCS), (2013).

    국내 21 이상철, Saungeun Park, Srikar Jandhyala, 이영곤, 강창구, 김용훈, Jiyoung Kim, 이병훈, "Top-gated flexible graphene field-effect transistors with high carrier mobilities", 20th Korean Conference on Semiconductors(KCS), (2013).

    국제 20 H.S. Shin, H.J. Hwang, J. Noh, Y.G. Lee, C. Cho, S.K. Lim and B.H. Lee “Fabrication of suspended graphene cantilever using top down process,” Int. Conf. on Electronic Materials and Nanotechnology for Green Environment (ENGE),  (2012).

    국제 19 Y.G. Lee, C.G. Kang, C. Cho, Y.H. Kim, H.J. Hwang, J.J.Kim, U.J. Jung, E.J.Park, M.W.Kim, B.H. Lee, "Mechanisms of Ambient Dependent Mobility Degradation in the Graphene MOSFETs on SiO2 Substrate," Silicon Nanoworkshop (SNW), (2012).

    국내 18 Y.H.Kim, Y.G.Lee, J.J.Kim, U.Jung, S.C.Song, B.H.Lee, “Capacitance-voltage measurement of leaky Al2O3 MIM capacitor using Time Domain Reflectometry (TDR)", 19th Korea Semiconductor Conference (KSC), (2012).

    국내 17 E.J.Park, C.G.Kang, S.K.Lee, C.Cho, Y.G.Lee, H.J.Chung, S.Seo, B.H.Lee, “Effects of SC1 cleaning on the performance of graphene FET", 19th Korea Semiconductor Conference (KSC), (2012).

    국제 16 B.H.Lee, H.J.Hwang, E.J. Paek, Y.G.Lee, C.G.Kang, S.K.Lee, C.Cho, “Applications of Metal/PVDF-trFE/Graphene Devices for Future Electronics," Workshop on Frontiers in Electronics, (2011), Best Poster Paper Award.

    국제 15 Y.G. Lee, C.G. Kang, Y.H. Kim, C.H. Cho, U.J. Jung, S.K. Lee, B.H. Lee, "Study on the Origin of Hysteretic Characteristics of Graphene Field Effect Transistor," IEEE SISC, (2011).

    국제 14 C.G. Kang, Y.G. Lee, S.K. Lee, E. Park, C.H. Cho, S.K. Lim, H.J. Hwang, B.H. Lee, "Enhancement of electron conduction and reduction of hysteresis for graphene FET by low temperature ALD Al2O3 Passivation", IEEE SISC, (2011).

    국제 13 C. Cho, S.K. Lim, C.G. Kang, Y.G. Lee, H.J. Hwang, E.J. Park, and B.H. Lee, “Electrical Characteristics of Back Gated FET on a Wrinkle Free Graphene Channel,” Ext. Abs. of Solid State Devices and Materials (SSDM), p.38, (2011).

    국제 12 E.J Paek, H.J. Hwang, S.K. Lee, C.G. Kang, C.H. Cho, Y.G. Lee, S.K. Lim, and B.H. Lee, “Touch Pressure Sensor using Metal/PVDF-TrFE/Graphene Device,” Ext. Abs. of Solid State Devices and Materials (SSDM), p.1331, (2011).

    국제 11 B.H.Lee, Y.G.Lee, C.G. Kang, H.J.Hwang, Y.H. Kim, J.J. Kim, U.J. Jung, “Electrical Characterization Methods for graphene MOSFET,” Workshop on Nano and Giga Challenges, Moscow, (2011), Invited.

    국제 10 C.Cho, C.G.Kang, Y.G.Lee, H.J.Hwang, S.K.Lee, S.K. Lim, S.Y.Lee, H.Hwang, B.H.Lee, " Electrical Characteristics of Top Gate Graphene FETs on Laser Graphitized 4H-SiC," Silicon Nanoworkshop (SNW), (2011).

    국제 9 C.G.Kang, S.K.Lee, Y.G.Lee, H.J.Hwang, C.H.Cho, J.S.Heo, H.J.Chung, H.J.Yang, S.E.Seo, B.H.Lee, "Variability and Feasibility of CVD Graphene Interconnect", Proc. of VLSI-TSA, (2011).

    국내 8 Y.G. Lee, C.G. Kang, U.J. Jung, J.J. Kim, H.J. Hwang, H.J. Chung, H. Yang, S. Seo and B.H. Lee "Short Pulse Characterization of Hysteric Characteristics of Graphene Field Effect Transistor", 18th Korean Conference on Semiconductors (KCS), (2011).

    국내 7 U.J. Jung, Y.G. Lee, J.J. Kim, I. Mejia, A. Salas-Villasenor, M. Quevedo-Lopez, J. Kim and B.H. Lee "A Study on the Electrical Characterization methods for CdS channel MOSFETs", 18th Korean Conference on Semiconductors (KCS), (2011).

    국내 6 S.K. Lee, H.J. Hwang, Y.G. Lee, J.J. Kim, C.G. Kang, C.Y. Kang and B.H. Lee, "Reduction of Unwanted External Noises of Low Frequency Noise (1/f noise) Measurement", 18th Korean Conference on Semiconductors (KCS), (2011).

    국내 5 C.G. Kang, Y.G. Lee, S.K. Lee, H.J. Hwang, C.H. Cho, S.K. Lim, S.Y. Lee, E.J. Park, J. Heo, H.J. Chung, H. Yang, S. Seo and B.H. Lee, "Passivation effects of low temperature ALD Al2O3 gate dielectric for graphene FET", 18th Korean Conference on Semiconductors (KCS), (2011).

    국제 4 Y.G. Lee, C.G. Kang, S.K. Lee, K.J. Choi, C.H. Cho, H.J. Hwang, S.Y. Lee, S.K. Lim, U.J. Jung, and B.H. Lee, "Characteristics of Very Low Temperature ALD Al2O3 Gate Dielectric for Top Gate Graphene MOSFET Applications", Ext. Abs. of Int. Workshop on Dielectric Thin Film (IWDTF), p.21, (2011).

    국제 3 S.K. Lim, C.H.Cho, S.Y. Lee, H.J.Hwang, C.G. Kang, Y.G. Lee, J. Ahn, and B.H. Lee,"Study of the graphene transfer from graphitized SiC substrate", Ext. Abs. of SSDM, pp.591, (2010).

    국제 2 B.H. Lee, H.J. Hwang, Y.G. Lee, U.J. Jung, "Feasibility of Mechanical Switch Device using a Graphite Electrode", IMRS, Cancun, (2010), Invited.

    국제 1 B.H. Lee, C.H. Cho, S.K. Lim, S.Y. Lee, H.J. Hwang, Y.G. Lee, U.J. Jung, C.G. Kang, "Feasibility of Wrinkle Free Graphene Process", Abs. of American Vac. Soc. Symposium, Albuquerque, p.61, (2010), Invited

    Patents/Book

    국내 3 노진우, 허선우, 이병훈, 이영곤,  "시간-도메인 반사 측정 신호를 이용한 고주파대역 정전용량 추출 방법, 장치 및 이를 구현하는 컴퓨터로 읽을 수 있는 기록 매체," 국내특허 (사사: SK 하이닉스)

    국제 2 Byoung Hun Lee, Yong Hun Kim, Young Gon Lee, "반도체 장치의 검사방법및 이에 사용되는 프로빙 어셈블리", US patent application No. 2013-0120988 , 2014. (사사: SAMSUNG System LSI, IB-201305-020-1-US0, 과기원관리번호: IP12110705)

    국내 1 Yong Hun Kim, Young Gon Lee, Byoung Hun Lee, " 반도체 장치의 검사 방법 및 이에 사용되는 프로빙 어셈블리", 국내출원번호: 10-2013-0120988 (사사: 삼성전자 System LSI)

    Other Expertise

    Experience

    Since 2014.01 : Exchange student in University of Texas at Dallas (UTD)

    2006.12-2007.02 : Research Assistant, Korea Institute for Advanced Study

    Technical Skills

    Device characterization

    Semiconductor integration process

    Labview programming


    Training for Semiconductor Processing, Inter-university Semiconductor Research Center, 2008

    Course Work

    Master

    Magnetic Materials

    Advanced Ceramic Processing

    Seminar for Nano Processing Technology

    Advanced Packaging for Semiconductor

    Materials for Data Storage

    Advanced Thermo-mechnical working ofMaterials I

    Characterization of Interfaces and Surfaces

    Light-emitting Materials

    Ph. D

    Device Physics for Nanoscale solid devices

    Introduction to Nanofabrication andNanomanufacturing

    Nanomaterials

    Nanoelectronics

    Post CMOS Hybrid Device Technology

    Electrical characterization for advancednano-scale devices

    Organic Materials for Electronics andPhotonics I

    Solid State Electrochemistry