Kim, Yonghun (Y.Kim)
- Current affiliation
- 2016 - current, KIMS, Research staff
since 2011 : Ph.D, Dept. of MSE, GIST
2009 – 2011 : M.S., Dept. of MSE, GIST
2002 – 2009 : B.S., Dept. of MSE, Chungnam National University
- Research Interest
Advanced Electrical characterization methods for future semiconductor devices
Time Domain Reflectometry (TDR) measurement for leaky dielectric devices
1/f noise and RTN measurement for semiconductor devices
Semiconductor device reliability methodology
56 S.Y.Kim, K.Y.Kim, A.R Kim, H.I.Lee, Y.S. Lee, S.M.Kim, H.W.Lee, H.J.Hwang and B.H. Lee*, "Operation principles of ZnO/Al2O3-AlDMP/ZnO channel ternary thin film transistor," Submitted to Advanced Electronic Materials (2021).
55 S.M.Kim, H.I.Lee, Y.S.Lee, S.Y.Kim, T.J. Yoo, S.W.Heo, S.C.Kang, H.J.Hwang, B.H.Lee*, "Non-destructive Analysis of physical defects in a graphene channel using Amplitude Modulated Discharge Current," Submitted to Carbon (2021).
54 T.J.Yoo, S.Y.Kim, M.G.Kwon, C.H.Kim, K.E.Chang, H.J.Hwang and B.H. Lee*, "A facile method to improve the detectivity of graphene/p-type silicon heterojunction photodetector," In revision, Laser and Photonics Reviews (2021).
53 S.Y.Kim, J.A.Yoo, H.J. Hwang and B.H. Lee*, "Demonstration of programmable ternary graphene field-effect transistor using ferroelectric polymer doping," In press, Organic Electronics (2021).
52 H.G. Jing, H.W. Yeo, B.Z. Lyu, J.A. Ryou, S.H.Choi, J.H. Park, B.H.Lee, Y.H. Kim, S.J.Lee, "Modulation of the Electronic Properties of MXene (Ti3C2Tx) via Surface-Covalent Functionalization with Diazonium," on-line published, ACS Nano (2021) (Nanottps://doi.org/10.1021/acsnano.0c08664)
51 T.H.Kim, W.J.Park, S.Y. Oh, S.Y. Kim, N. Yamata, H. Kobayashi, H.Y. Jang, J.H. Nam, H. Habazaki, B.H. Lee, B.J. Cho, "Unveiling the role of Al2O3 interlayer in indium gallium zinc oxide transistors," In press, Physica Status Solidi A, (2021).
50 J.W. Um. S.Y. Kim, B.H. Lee, J.B. Park, S.H.Jeong, "Direct writing of graphite thin film by laser-assisted chemical vapor deposition," Carbon 169, pp.163-171 (2020).
49 J.E. Kim, T.H. Kim, S.Y. Oh, J.H. Nam, H.Y. Jang, Y.H. Kim, N. Yamada, H. Kobayashi, S.Y. Kim, B.H.Lee, H. Habazaki, W.J. Park, B.J. Cho, "Al2O3 induced sub-gap doping on IGZO channel for the detection of infrared light," In press, ACS Applied Electronic Materials (2020)
48 S.Y.Kim, J.A. Ryou, M.J. Kim, K.Y.Kim, Y.S.Lee, S.M.Kim. H.J.Hwang, Y.H.Kim, B.H.Lee*, "Performance degradation in graphene-ZnO barristors due to graphene edge contact," ACS Applied Materials and Interfaces 12(25), pp.28768-28774 (2020).
47 S.C.Kang, S.Y.Kim, S.K.Lee, K.Y.Kim, B. Allouche, H.J.Hwang, and B.H. Lee*, "Channel defect profiling and passivation for ZnO thin film transistors," Nanomaterials 10(6), pp.1-8 (2020).
46 M.Son, S.S.Chee, S.Y.Kim, W.Lee, Y.H.Kim, B.Y.Oh, J.Y.Hwang, B.H.Lee, M.H.Ham, "High-quality nitrogen-doped graphene films synthesized from pyridine via two-step chemical vapor deposition ", Carbon 159, p.579(2020).
45 M.Son, H.Kim, J.Jang, S.Y.Kim, H.C.Ki, B.H.Lee, I.Kim, M.H.Ham, "Low-power complementary logic circuit using polymer electrolyte-gated graphene switching devices", ACS Applied Materials & Interfaces, 11, 47247-47252, (2019).
44 H.J.An, H. Hong, Y.R.Jo, J.M.Lee, H.J.Yoon, S.Y. Kim, J.S. Song, S.Y. Jeong, B.H.Lee, B.J.Kim, S.G.Jung, T.S.Park, S.M.Kim, C.W.Bark, S.W.Kim, T.Y. Koo, K.T.Ko,, B.J.Kim, S.H.Lee, "Reversible magnetoelectric switching in multiferroic three-dimensional nanocup heterostructure films,” NPG Asian Materials, 11(68), 1-10, (2019).
Y.J. Yoo, Y.J. Kim, S.Y. Kim, J.H. Lee, J.H.Ko, J.W.Lee, K.J. Kim, B.H.Lee, Y.M. Song, "Mechanically Robust Antireflective Moth-eye Structures with a tailored coating of dielectric materials,” Optical Materials Express, 9(11), 4178-4186, (2019).
42 J.S.Song, K.S.Choi, S.J.Yoon, W.B.Sohn, S.P.Hong, T.H.Lee, H.J.An, S.Y.Cho, S.Y.Kim, D.H.Kim, T.M.Kim, S.Y.Jeong, C.W.Bark, B.H.Lee, S.D.Bu, H.W.Jang, C.H.Jeon, S.H.Lee, "Enhancement of Ferroelectric Properties of Superlattice-Based Epitaxial BiFeO3 Thin Films via Substitutional Doping Effect," J. of Physical Chemistry C, 123(18), pp.11564-11571 (2019).
41 S.C. Kang, S.M. Kim, U.J. Jung, Y.H. Kim, W.J. Park, B.H. Lee*, "Interface state degradation during AC Positive Bias Temperature Instability Stress,” Solid State Electronics 158, pp.46-50(2019).
40 S.Y. Kim, J.W. Hwang, Y.J. Kim, H.J. Hwang, M.W. Son, N. Revannanth, M.H.Ham, K.J. Cho, B.H. Lee*, “ Threshold Voltage Modulation of Graphene-ZnO Barristor Using a Polymer Doping Process,” Advanced Electronic Materials, 5(7), 1800805, (2019).
39 K.E.Chang, C.H.Kim, T.J.Yoo, M.K.Kwon, S.Heo, S.Y.Kim, Y.Hyun, J.I.Yoo, H.C.Ko, B.H. Lee*, “ High-Responsivity Near-Infrared Photodetector Using Gate-modulated Graphene/Germanium Schottky Junction,” Advanced Electronic Materials, 5(6), 1800957 (2019).
38 H.J. Hwang, S.Y. Kim, S.C. Kang, B. Allouche, B.H. Lee *, “ Piezoelectrically modulated touch pressure sensor using a graphene barristor,” Jpn. J. Appl. Phys.58(SB), SBBH03(2019).
37 S.Y.Kim, M.B. Kim, H.J.Hwang, B. Allouche, B.H.Lee *, “ Chemically doped graphene based ternary field effect transistors,” Jpn. J. Appl. Phys. 58(SB), SBBH04 (2019).
36 S. Lai, S.J. Byeon, S.K. Jang, J.H. Lee, B.H. Lee, J.H. Park, Y.H. Kim, S.J. Lee, “HfO2/HfS2 hybrid heterostructure fabricated via controllable chemical conversion of two-dimensional HfS2," Nanoscale 10, p.18758-18766 (2018).
35 S.W. Heo, S.M. Kim, K.Y. Kim, H.J. Lee, S.Y. Kim, Y.J. Kim, S.M. Kim, H.I. Lee, S.G. Lee, K.R. Kim, S.H. Kang, B.H. Lee*, "Ternary full adder using multi-threshold graphene barristor," IEEE Electron Device Letters 39(12), p.1948 (2018).
34 S.W.Heo, H.I.Lee, H.J. Lee, S.M. Kim, K.Y. Kim, Y.J. Kim, S.Y.Kim, J.H.Kim, M.H. Yoon, B.H.Lee*, “Very low-temperature integrated complementary graphene barristor based inverter for thin film transistor applications," Annalen der Physik ,530(10), p.1800224 (2018).
33 S. Seo, H. Choi, S.Y. Kim, J. Lee, K. Kim, S. Yoon, B.H. Lee, S. Lee , “Growth of centimeter-scale monolayer and Few-layer WSe2 thin films on SiO2/Si substrates via pulsed laser deposition," Advanced Materials Interfaces 5(20), p.1800524(2018).
32 J.S. Song, M.J. Seo, T.H. Lee, Y.R. Jo, J.M. Lee, T.M. Kim, S.-Y. Kim, S.M. Kim, S.Y. Jeong, H.J. An, S.K. Kim, B.H. Lee, D.H. Lee, H.W. Jang, B.J. Kim, S.H. Lee, “ Tailoring crystallographic orientations to substantially enhance charge separation efficiency in anisotropic BiVO4 photoanodes,” ACS Catalysis, 8(7), p. 5952 (2018).
31 K.E. Chang, T.J. Yoo, C.H. Kim, Y.J. Kim, S.K. Lee, S.Y. Kim, S.W.Heo, M.G. Kwon, B.H. Lee*, “Gate controlled graphene-silicon Schottky junction photodetector," Small 14(28), p. 1801182(2018).
30 D.H.Kim, S.K.Lim, B.Y.Bae, C.K.Kim, S.W.Lee, M.S.Seo, S.Y.Kim, K.M.Hwang, G.B.Lee, B.H. Lee. Y.G.Choi, “Quantitative Analysis of Deuterium Annealing Effect on Poly-Si TFTs by Low Frequency Noise and DC I-V Characterization," IEEE Trans. on Electron Device 65(4), p. 1640 (2018).
29 S.Y.Kim, Y.J.Kim, U.Jung, B.H.Lee*, “Chemically induced Fermi Level Pinning Effects of High-k Dielectrics on Graphene," Scientific Reports 8(1), pp.2992 (2018).
28 Y.J.Kim, W.J.Park, J.H.Yang, Y.H. Kim, B.H.Lee*, "Contact resistance reduction of WS2 MOSFETs with Ti contact contact using high-pressure hydrogen annealing," IEEE J. Elect. Dev. Soc. 6(1), p. 164-168 (2017).
27 Y.H.Kim, A.R.Kim, G. Zhao, S.Y.Choi, S.C.Kang, S.K.Lim, K.E.Lee, J.C.Park, B.H.Lee, M.G.Hahm, D.H.Kim, J.J.Yun, K.H.Lee, B.J.Cho , "Wafer-Scale Integration of Highly Uniform and Scalable MoS2 Transistors," ACS Applied Materials and Interfaces 9(42), pp. 37146-37153(2017).
26 H.J. Hwang, K.E. Chang, W.B.Yoo, C.H.Shim, S.K.Lee, J.H. Yang, S.Y. Kim, Y.S. Lee, C. Cho, B.H. Lee*, “Graphene barristor using nitrogen profile controlled ZnO Schottky contacts," Nanoscale 9, p.2442 (2017).
25 Y.J. Kim, S.Y. Kim, J. Noh, C.H. Shim, U.J. Jung, S.K. Lee, K.E. Chang, C. Cho, B.H. Lee*, "Demonstration of Complimentary Ternary Graphene Field Effect Transistors ," Scientific Reports 6, p.39393 (2016).
24 Y. Kumaresan, Y.S. Pak, N.S. Lim, Y.H. Kim, M.J. Park, S.M. Yoon, H.M. Youn, H. Lee, B.H. Lee, G.Y. Jung, “Highly Bendable In-Ga-ZnO Thin Film Transistors by Using a Thermally Stable Organic Dielectric Layer,” on-line published, Scientific Reports, 2016.
23 Y.H. Kim, A.R. Kim, J.H. Yang, K.E. Chang, J. Kwon, S. Y. Choi, K. H. Lee, B.H. Lee, M.G. Hahm, and B. Cho, "Alloyed 2D Metal-Semiconductor Heterojunctions: Origin of Interface States Reduction and Schottky Barrier Lowering", Nano Letters . 16(9), p.5928 (2016)
22 B.J.Co, A.R.Kim, D.J.Kim, H.S.Chung,S.Y.Choi, J.D. Kwon, S.W.Park, Y.H.Kim, B.H.Lee, K.H.Lee, D.H.Kim, J.W.Nam, M.G.Hahm, “Two-Dimensional Atomic-Layered Alloy Junctions for High-Performance Wearable Chemical Sensor," ACS Applied Materials and Interfaces 8, p.19635-19632 (2016).
21 Y.H.Kim, W.J.Park, J.H. Yang, C Cho, S.K.Lee, B.H.Lee*, "Reduction of Low Frequency Noise at Multilayer MoS2 FETs using a Fermi Level De-pinning Layer," on-line published, Physica Status Solidi-RRL (2016).
20 J.W. Yoon, Y.K. Jeong, H.J. Kim, S.G. Yoo, Y.H. Kim , Y.K. Hwang, Y.J. Hyun, W.K. Hong, B.H.Lee, S.H. Choa, H.C. Ko, "Robust stretchable indium gallium Zinc oxide-based electronic textiles formed by cilia-assisted transfer printing," Nature communications 7, p.11477 (2016).
19 Y.H.Kim, S.C.Kang, S.K.Lee, U.J.Jung, S.M. Kim, B.H.Lee*, “ Hot carrier instability of nMOSFETs under Pseudo Random Bit Sequence stress ," IEEE Electron Device Letters 37(4), pp.366 (2016).
18 A.R.Kim, Y.H.Kim, J.W.Nam, H.S. Chung, D.J.Kim, J.D.Kwon, S.W.Park, J.C.Park, S.Y.Choi, B.H.Lee, J.H.Park,K.H.Lee, D.H.Kim, S.M.Choi,A. Pulickel, M.G.Hahm, B.J.Cho, “ Alloyed 2D metal-semiconductor atomic layer junctions ," Nano Letters 16(3). pp.1890 (2016).
17 W.J.Park, Y.H.Kim, U.J. Jung, J.H.Yang, C. Cho, Y.J.Kim, S.M.N Hasan, H.G.Kim, H.B.R.Lee, B.H.Lee*, “Unipolar WS2 Field Effect Transistors using Fermi level de-pinning contact metals," Advanced Electronic Materials, p.1500279 (2015).
16 B.H.Lee*, H.J.Jwang, K.E.Chang, Y.J.Kim, S.Y.Kim, Y.B.Yoo, “그래핀 소자기술," The Mag. of the IEIE (2015). (invited)
15 U.J. Jung, J.J. Kim, Y.H. Kim, Y.G. Lee, S.C Song, J. Blatchford, B. Kirkpatrick, H.Niimi, B.H.Lee*, “Dipole-Induced Gate Leakage Reduction in Scaled MOSFETs with a Highly Doped Polysilicon/Nitrided Oxide Gate Stack,” Microelectronic Engineering, 142, p.1 (2015).
14 Y.H. Kim, Y.G. Lee, U. Jung, J.J. Kim, M.H. Choe, K.T. Lee, S.W. Pae, J.W. Park, B.H.Lee*, "Extraction of Effective Mobility from nMOSFETs with Leaky Gate Dielectric using Time Domain Reflectometry," IEEE Trans. Elect. Dev., 62(4), P.1092 (2015).
13 U.Jung, Y.J.Kim, Y.H.Kim, Y.G.Lee, and B.H.Lee* "Extraction of the Interface State Density of Top Gate Graphene Field Effect Transistors", on-line published, IEEE Electron Device Letters, 36(4), p.408 (2015)
12 Y.H.Kim, S.H.Baek, C.H.Jeon, Y.G.Lee, J.J.Kim, U.J.Jung, S.C.Kang, W.Park, S.H.Lee, B.H.Lee*, " Leakage current limit of time domain reflectometry in ultra-thin dielectric characterization", Jpn. J. of Appl. Phys. 53, 08LC02, (2014). (Special Issue)
11 S.C.Lee, O.D. Iyore, S.E. Park, Y.G. Lee, S. Jandgyala, C.G. Kang, Y.H. Kim, M. Q.Lopez, B.E. Gnade, R.M. Wallace, B.H.Lee*, J.Kim, "Rigid substrate process to achieve high mobility in graphene field-effect transistors on a flexible substrate”, Carbon, 68, p.791-797 (2014).
10 J.J. Kim, M.W.Kim, U.J. Jung, K.E.Chang, S.K.Lee, Y.H.Kim, Y.G. Lee, R.Choi, B.H.Lee*, " Intrinsic time zero dielectric breakdown characteristics of HfAlO Alloys", IEEE Trans. Electron Device, 60(11), p.3683 (2013).
9 Y.G.Lee, C.G.Kang, C.Cho, Y.H.Kim, H.J.Hwang, B.H.Lee*, “Quantitative analysis of hysteretic reactions at the interface of graphene and SiO2 using short pulse I-V method,” Carbon, 60, p.453-460 (2013).
8 C.G.Kang, S.K.Lim, S.C.Lee, S.K.Lee,C.Cho, Y.G.Lee, H.J.Hwang, Y.H. Kim, H.J.Choi, S.H.Choe, M.H.Ham and B.H.Lee*, “Effects of Multi-Layer Graphene Capping on Cu interconnects," Nanotechnology, 24, 115707, (2013). , Also selected as article of particular interest.
7 J.W.Yoon, W.Park, G.Y.Bae, Y.H.Kim, H.S.Jang, Y.J. Hyung, S.K.Lim, Y.H.Kahng, W.K.Hong, B.H.Lee, H.C.Ko , "Highly Flexible and Transparent Multilayer MoS2 Transistors with Graphene Electrodes”, Small, 9(19), p.3295 (2013).
6 S.C. Lee, J.-S. Yeo, Y.S. Ji, C. Cho, D.Y. Kim, S.I. Na, B.H. Lee, and T. Lee, " Flexible organic solar cells composed of P3HT:PCBM using chemically doped graphene electrodes", Nanotechnology, 23, p.344013, Aug. 2012.
5 Y.Kim, Y.G.Lee, M.Kim, C.G. Kang, U.Jung,J.J.Kim, S.C.Song, J. Blatchford, B. Kirkpatrick, H. Niimi, K.Y.Lim, B.H.Lee*, "Capacitance analysis of highly leaky Al2O3 MIM capacitor using time domain reflectometry," IEEE Electron Dev. Lett., 33(9), p. 1303-1305, Jul. 2012.
4 S.C. Lee, G.Jo, S.J. Jang, W.Park, Y.H.Kahng, D.Y.Kim, B.H.Lee, T.H.Lee, "Characterization on Improved Effective Mobility of Pentacene Organic Field-Effect Transistors Using Graphene Electrodes", Jpn. J. Appl. Phys. 51, p.02BK09 , Feb. (2012)
3 B.H.Lee, Y.G.Lee, U.J.Jung, Y.H.Kim, H.J. Hwang, J.J. Kim, C.G.Kang, "Issues with the Electrical Characterization of Graphene Devices," Carbon Letters, Vol. 13(1), Jan. 2012. (Invited)
2 Y.H. Kim, G. Wang, M.H. Choe, J.W. Kim, S.C. Lee, S.J. Park, D.-Y. Kim, B.H. Lee, T. Lee, “Electronic properties associated with conformational changes in azobenzene-derivative molecular junctions”, Organic Electronics 12, p.2144 , Sep. 2011.
1 S.C.Lee, S.J.Kang, G.H.Jo, M.H.Cho, W.J.Park, J.W.Woon, T.H.Kwon, Y.H.Kahng, D.Y.Kim, B.H.Lee, T.Lee "Enhanced charactteristics of pentacene field-effect transistors with graphene electrodes and substrate treatments," Appl. Phys. Lett. 99, 083306, Aug. 2011.
국제 43 Y.S.Lee, S.M.Kim, H.I.Lee, S.Y.Kim, C.H.Kim, H.J.Hwang, and B.H.Lee*, "Low Temperature and Parameter Controllable ZnO-DNTT Antiambipolar Transistor and Its Ternary Application" Int. Conf. on Electronic Materials and Nanotechnology for Green Environment (ENGE), (2020).
국제 42 S.Y.Kim, S.R.Lee, S.M.Kim, Y.S.Lee, H.I.Lee, H.W.Lee, K.Kim, H.J.Hwang, and B.H.Lee*, "A study on the electrical characteristic of ultra-thin oxide semiconductor field-effect transistor" Int. Conf. on Electronic Materials and Nanotechnology for Green Environment (ENGE), (2020).
국제 41 S.M.Kim, H.I.Lee, S.Y.Kim, Y.S.Lee, H.J.Hwang, and B.H.Lee*, "A Study on the Degradation Mechanism of Vertical Stacked ZnO TFT" Int. Conf. on Electronic Materials and Nanotechnology for Green Environment (ENGE), (2020).
국제 40 H.I.Lee, Y.S.Lee, S.M.Kim, S.Y.Kim, H.J.Hwang, and B.H.Lee*, "Demonstration of frequency doubler using ZnO-DNTT antiambipolar transistor with high peak-to-valley ratio (>106)," Int. Conf. on Electronic Materials and Nanotechnology for Green Environment (ENGE), (2020).
국제 39 H.W.Lee, S.Y.Kim, S.M.Kim, H.I.Lee, Y.S.Lee, H.J.Hwang and B.H.Lee*, "A study on the atomic layer deposited tin oxide channel for thin film transistor", NANO KOREA, (2020).
국제 38 Y.S.Lee, H.J.Kwon, H.I.Lee, S.Y.Kim, S.M.Kim, K.Kim, H.W.Lee, H.J.Hwang and B.H.Lee*, "Electrical performance of p-type ternary logic device and its circuit application", NANO KOREA, (2020).
국제 37 A.R.Kim, S.Y.Kim and B.H.Lee*, "The study of the operation mechanism for ZnO-based ternary device through electrical analysis", NANO KOREA, (2020).
국제 36 S.Y.Kim, K.Kim, A.R.Kim, H.I.Lee, Y.S.Lee, S.M.Kim, H.W.Lee, H.J.Hwang and B.H.Lee*, "Electrical performance of stack channel ternary logic device depending on the carrier concentration of ZnO", NANO KOREA, (2020).
국제 35 S.Y.Kim, Y.Lee, C.Kim, H.I.Lee, K.Kim, H.J.Hwang, B.H.Lee, "Dual Channel Ternary Graphene Barristor with Tunable Schottky Barrier Height controlled by Chemical Doping", 50th IEEE Semiconductor Interface Specilaists Conference (SISC), (2019)
국제 34 T.J.Yoo, S.Y.Kim, C.Kim, M.G.Kwon, K.E.Chang, H.J.Hwang, B.H.Lee, "Dark current reduction for the chemically doped graphene/p-Si Schottky photodetector", 50th IEEE Semiconductor Interface Specilaists Conference (SISC), (2019)
국제 33 B.H.Lee, S.Y. Kim, K.Y.Kim, H.I.Lee, S.HKang, M.M.Sung, "Recent progress towards ternary logic devices for extreme low power architecture," Presented at Semicondoutor Interface Specialist Conference, 2019. (Invited)
국제 32 B.H.Lee, Y.J.Kim, T.J.Yoo, S.Y.Kim, H.Jun.Hwang, S.K.Lee, "Electronic device applications of graphene for future semiconductor technology," IUMRS-ICAM, Daejon, Korea (2018). Invited
국제 31 B.H.Lee, Y.J.Kim. T.J.Yoo, S.Y.Kim, H.J.Hwang, S.K.Lee, "Electronic device applications of graphene for future semiconductor technology," Graphene 2018, Dresden, Germany (2018). Invited
국제 30 S. Y. Kim, H. J. Lee, S. M. Kim, K. Y. Kim, K. E. Chang, S. K. Lee, H. J. Hwang, S. Heo, B. H. Lee, "Device applications of chemically doped graphene," Silicon Nanoworkshop (SNW), (2018).
국제 29 S. Y. Kim, Y. J. Kim, H. J. Hwang, S. K. Lee, and B.H.Lee, “Ternary graphene-ZnO barristor using a chemically doped graphene”, 48th IEEE Semiconductor Interface Specilaists Conference (SISC), (2017)
국제 28 S. Heo, Y. J. Kim, K. J. Han, K. Y. Kim, H. I. Lee, S. M. Kim, S. K. Lee, K. E. Chang, J. H. Kim, M. H. Yoon, and B.H.Lee, “Low temperature integrated complementary graphene barristor to overcome the thermal budget in monolithic 3D integration”, 48th IEEE Semiconductor Interface Specilaists Conference (SISC), (2017)
국제 27 T.J.Yoo, Y.H.Kim, S.K.Lee, K.E.Chang, A.N.R.Reza, H.I.Lee, B.H.Lee, “Near Infrared Photon Absorption at Graphene Photodetectors Decorated with Black Phosphorus Flakes", Nano Korea, (2016).
국제 26 J.A.Yoo, J.H.Yang, S.Y.Kim, B.H.Lee, “Direct Analysis of the Surface potential of chemical doped graphene using Electrostatic Force Microscopy", Nano Korea, (2016), Best poster award.
국제 25 C.H.Shim, S.W. Heo, J.W.Noj, Y.J.Kim, S.Y.Kim, A.K.Khan, B.H.Lee, "Design of Ratioless Ternary Inverter using Graphene Barristor", IEEE ISMVL, (2016).
국내 24 강수철, 김용훈, 정욱진, 박우진, 김승모, 이병훈, "FinFET의 Bipolar AC Stress에 의한 Reliability 특성", 23rd Korean Conference on Semiconductors(KCS), 2016, Best poster award.
국제 23 Y.J. Kim, S.Y. Kim, U. Jung, S.K. Lee, K.E. Chang, C. Cho and B.H. Lee, "Fermi level of graphene under a metal contact modulated by high pressure hydrogen anneal", SISC, (2015)
국내 22 이상경, 김윤지, 정욱진, 김용훈, 유태진, 이병훈, “Buried gate Graphene FET의 게이트 절연막 scaling 연구”, 22nd Korean Conference on Semiconductors(KCS), 2015
국내 21 박우진, 김용훈, 이상경, 정욱진, 양진호, 조천흠, 김윤지, 임성관, 이병훈, “MoS2 전계효과 트랜지스터의 컨택 저항 개선 방법”, 22nd Korean Conference on Semiconductors(KCS), 2015
국내 20 강수철, 이영곤, 김용훈, 정욱진, 박우진, 김윤지, 이병훈, “FinFET의 AC Stress Reliability 특성”, 22nd Korean Conference on Semiconductors(KCS), 2015
국내 19 김용훈, 정욱진, 강수철, 이영곤, 이병훈, “TDR 분석법을 이용한 미세전계효과소자의 Effective Moliblity 추출 방법”, 22nd Korean Conference on Semiconductors(KCS), 2015
국내 18 정욱진, 김윤지, 김용훈, 김소영, 이병훈, “Top gate graphene FET의 Fermi level과 계면결함 밀도의 상관관계 연구”, 22nd Korean Conference on Semiconductors(KCS), 2015, Best poster award.
국제 17 W.J.Park, Y.H.Kim, S.K.Lee, U.Jung, J.H.Yang, C.Cho, Y.J.Kim, S.K.Lim, I.S. Hwang, H.B.R.Lee, and B.H.Lee, “Contact Resistance Reduction using Fermi Level De-pinning Layer for MoS2 FETs”, Tech. Dig of IEDM, (2014).
국제 16 W.J.Park, Y.H.Kim, S.K.Lee, U.Jung, J.H.Yang, C.Cho, Y.J.Kim, S.K.Lim, and B.H.Lee, “Contact Resistance Reduction for MoS2 FETs with Insulating Layers”, 44th IEEE Semiconductor Interface Specilaists Conference (SISC), (2014).
국제 15 Y.G.Lee, L.Cheng, Y.Kim, G.Mordi, H.J.Hwang, A.Lucero, B.H.Lee, J.Kim, “Development of Low-k Dielectric for Graphene Device”, AVS 61st International Symposium, (2014).
국제 14 U.Jung, Y.Kim, S.Lee B.H.Lee, “Novel Method to Extract the Defect Levels of Charge Traps at Top Gate Graphene FETs", Int. Conf. on Electronic Materials and Nanotechnology for Green Environment (ENGE), (2014)
국제 13 J.Noh, K.E.Chang, C.H.Shim, S.Y.Kim, B.H.Lee, “Performance prospect of Graphene Barristor with Hgih on-off Ratio (~107)", Proc. of Silicon Nanoworkshop, (2014).
국제 12 U.Jung, J.E. Lee, Y.G. Lee, J.J. Kim, Y.H. Kim, and B.H.Lee*, “Interfacial defects at top gate graphene FETs investigated using a novel discharging current measurement method”, Int. Workshop on Dielectric Thin Films. (IWDTF) , (2013).
국제 11 Y.H. Kim, S.H.C. Baek, C.H. Jeon, Y.G. Lee, J.J. Kim, U.J. Jung, S.H. Lee, and B.H. Lee, “Characterization of ultra-thin dielectric using time domain reflectometry" Int. Workshop on Dielectric Thin Films. (IWDTF) , (2013).
국내 10 장경은, 김진주, 김민우, 이상경, 정욱진, 김용훈, 이영곤, 이병훈, “Temperature effect on the intrinsic reliability of HfxAl1-xOy dielectric”, 20th Korean Conference on Semiconductors(KCS), (2013).
국내 9 정욱진, 김진주, 이재은, 이영곤, 김용훈, 강창구, 장경은, 이병훈, “연속적인 펄스를 이용한 Graphene channel MOSFETs 결함의 전기적 분석방법 연구”, 20th Korean Conference on Semiconductors(KCS), (2013).
국내 8 이재은, 정욱진, 김진주, 이영곤, 김용훈, 강창구, 장경은, 이병훈, "Majority Carrier 종류에 따른 Graphene channel의 펄스응답전류 특성 분석”,20th Korean Conference on Semiconductors(KCS), (2013).
국내 7 강창구, 임성관, 이상철, 이상경, 조천흠, 이영곤, 황현준, 김용훈, 최호준, 최선희, 이병훈, “반도체 배선으로서의 그래핀의 응용”, 20th Korean Conference on Semiconductors(KCS), (2013). Best paper award
국내 6 박우진, 양진호, 강창구, 조천흠, 이상철, 임성관, 김용훈, 이상경, 강수철, 홍웅기, 이병훈 "Study of touch sensing characteristics in PVDF-TrFE/MoS2 field-effect transistors", presented at 20th Korean Conference on Semiconductors(KCS), 2013.
국내 5 이상철, Saungeun Park, Srikar Jandhyala, 이영곤, 강창구, 김용훈, Jiyoung Kim, 이병훈, "Top-gated flexible graphene field-effect transistors with high carrier mobilities", 20th Korean Conference on Semiconductors(KCS), (2013).
국제 4 Y.G. Lee, C.G. Kang, C. Cho, Y.H. Kim, H.J. Hwang, J.J.Kim, U.J. Jung, E.J.Park, M.W.Kim, B.H. Lee, "Mechanisms of Ambient Dependent Mobility Degradation in the Graphene MOSFETs on SiO2 Substrate," Silicon Nanoworkshop (SNW), (2012).
국내 3 Y.H.Kim, Y.G.Lee, J.J.Kim, U.Jung, S.C.Song, B.H.Lee, “Capacitance-voltage measurement of leaky Al2O3 MIM capacitor using Time Domain Reflectometry (TDR)", 19th Korea Semiconductor Conference (KSC), (2012).
국제 2 Y.G. Lee, C.G. Kang, Y.H. Kim, C.H. Cho, U.J. Jung, S.K. Lee, B.H. Lee, "Study on the Origin of Hysteretic Characteristics of Graphene Field Effect Transistor," IEEE SISC, (2011).
국제 1 B.H.Lee, Y.G.Lee, C.G. Kang, H.J.Hwang, Y.H. Kim, J.J. Kim, U.J. Jung, “Electrical Characterization Methods for graphene MOSFET,” Workshop on Nano and Giga Challenges, Moscow, (2011), Invited.
국제 2 Byoung Hun Lee, Yong Hun Kim, Young Gon Lee, "반도체 장치의 검사방법및 이에 사용되는 프로빙 어셈블리", US patent application No. 2013-0120988 , 2014. (사사: SAMSUNG System LSI, IB-201305-020-1-US0, 과기원관리번호: IP12110705)
국내 1 Yong Hun Kim, Young Gon Lee, Byoung Hun Lee, " 반도체 장치의 검사 방법 및 이에 사용되는 프로빙 어셈블리", 국내출원번호: 10-2013-0120988 (사사: 삼성전자 System LSI)
- Other Expertise
Semiconductor Integration Process
- Course Work
Electronic properties of Materials
Advanced Electrical Characterization Methods for Nano Scale Devices
Thin Film Technology
Introduction to Nanofavrication and Nanomanufacturing
Device Physics for Nanoscale Solid Devices
Organic Materials for Electronic and Photonics I
Post-CMOS Hybrid Device Technology
Advanced Electron Microscope
Solid State Electrochemistry
Dielectric Properties of Materials
Theory of Semiconductor Devices
Understanding of LEDs