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Total 27건 1 페이지

2005
27

C.S. Park, N. Moumen, J. H. Sim, J. Barnnet, B. H. Lee, and G. Bersuker, "Performance of HfO2 Gate Stacks with in-situ Grown and O3 Chemical Interfacial Oxide Layers" APPLIED PHYSICS LETTERS, 87, 253510, 2005.12.15. https://doi.org/10.1063/1.2149511.
26

M.S. Akbar, N.Moumen, J.Barnett, B. H. Lee, and J.C.Lee, "Improvement in bias instabilities of Hf-silicate by dilute hydrochloric acid(500:1) post deposition rinsing and its effect after high pressure H2 anneal" APPLIED PHYSICS LETTERS, 87, 252903, 2005.12.14. https://doi.org/10.1063/1.2149974.
25

H. Luan, H. N. Alshareef, P. S. Lysaght, H. R. Harris, H. C. Wen, K. Choi, Y. Senzaki, P. Majhi and B. H. Lee, "Evaluation of tantalum silicon alloy system as gate electrodes" APPLIED PHYSICS LETTERS, 87, 212110, 2005.11.18. https://doi.org/10.1063/1.2126132.
24

H. R. Harris, R. Choi, J.H. Sim, C. Young, P. Majhi, B. H. Lee, G. Bersuker, "Electrical Observation of Deep Traps in High-k/Metal Gate Stack Transistors" IEEE ELECTRON DEVICE LETTERS, 26 (11), 839, 2005.10.24. https://doi.org/10.1109/LED.2005.857727.
23

H. Park, M. S. Rahman, M. Chang, B. H. Lee, R. Choi, C. D. Young and H. Hwang, "Improved Interface Quality and Charge-Trapping Characteristics of MOSFETs With High-k Gate Dielectric" IEEE ELECTRON DEVICE LETTERS, 26 (10), 725, 2005.09.19. https://doi.org/10.1109/LED.2005.855422.
22

R. Choi, S. C. Song, C. D. Young, G. Bersuker, and B. H. Lee, "Charge trapping and detrapping characteristics in hafnium silicate gate dielectric using an inversion pulse measurement technique" APPLIED PHYSICS LETTERS, 87, 122901, 2005.09.16. https://doi.org/10.1063/1.2043252.
21

H.-C. Wen, P. Lysaght, M. Campin, B. Foran, G. Lian, Rusty Harris, H. Alshareef, K. Choi, H. Luan, C. Huffman, P. Majhi, B. H. Lee and D.L. Kwong, "Thermal response of Ru electrodes in contact with SiO2 and Hf based high-K gate dielectrics" JOURNAL OF APPLIED PHYSICS, 98, 043520, 2005.08.24. https://doi.org/10.1063/1.2012510.
20

K. Choi, P. Lysaght, H. Alshareef, C. Huffman, H.-C. Wen, R. Harris, H. Luan,P.-Y. Hung, C. Sparks, M. Cruz, K. Matthews, P. Majhi, B. H. Lee, "Growth mechanism of TiN film on dielectric films and the effects on the work function" Thin Solid Films, 486, 141, 2005.02.11. https://doi.org/10.1016/j.tsf.2004.11.239.
19

P. S. Lysaght, B. Foran, G. Bersuker, J. J. Peterson, C. D. Young, P. Majhi, B. H. Lee, and H. R. Huff, "Physical comparison of HfO2 transistors with polycrystalline silicon and TiN electrodes" APPLIED PHYSICS LETTERS, 87, 082903, 2005.08.15. https://doi.org/10.1063/1.2011827.
18

Z. Zhang, S.C. Song, C.Huffman, M. M. Hussain, J. Barnett, N.Moumen, H.N. Alshareef, P.Majhi, J.H. Sim, S.H. Bae, and B. H. Lee, "Integration of Dual Metal Gate CMOS on High-k Dielectrics Utilizing a Metal Wet Etch Process" Electrochemical and Solid-State Letters, 8 (10), G271, 2005.08.12. https://doi.org/10.1149/1.2030447.
17

S.C.Song, B. H. Lee, Z.Zhang, S.H.Bae, K.Choi, P.Zeitzoff, "“Impact of Deposition Method of Metal Gate on Characteristics of Gate-First MOSFET with Hf-Silicate" Electrochemical and Solid-State Letters, 8 (10), G261, 2005.08.04. https://doi.org/10.1149/1.2007407.
16

C.D. Young, P. Zeitzoff, G.A. Brown, G.Bersuker, B. H. Lee, and J.R. Hauser, "Intrinsic mobility evaluation of high-k gate dielectric transistors using pulse Id-Vg" IEEE ELECTRON DEVICE LETTERS, 26 (8), 586, 2005.07.18. https://doi.org/10.1109/LED.2005.852746.
15

H.N. Alshareef, H.C. Wen, K. Choi, R. Harris, H. Luan, P. Lysaght, P. Majhi, M. El-Bouanani, V. Ukride, and B. H. Lee, "Modulation of the work function of silicon gate electrode using thin TaN interlayers" APPLIED PHYSICS LETTERS, 87, 052109, 2005.07.27. https://doi.org/10.1063/1.2006977.
14

G. Bersuker, P. Zeitzoff, J. Sim, B. H. Lee, R. Choi, G. Brown, C. Young, "“Mobility evaluation in transistors with charge-trapping gate dielectrics" APPLIED PHYSICS LETTERS, 87, 042905, 2005.07.22. https://doi.org/10.1063/1.1995956.
13

J.H.Sim, S.C.Song, P.D.Kirsch, C.D.Young, R.Choi, D.L.kwong, B. H. Lee and G.Bersuker, "Effect of ALD HfO2 thickness on charge trapping and mobility" Microelectronic Engineering, 80, 218-221, 2005.06.17. https://doi.org/10.1016/j.mee.2005.04.071.
12

B.H. Lee, R. Choi, J. Sim, S. Krishnan, J. Peterson, G.A. Brown and G.Bersuker, "Validity of Constant Voltage Stress Based Reliability Assessment of High-k Devices" IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 5 (1), 20, 2005.06.13(invited). https://doi.org/10.1109/TDMR.2005.845807.
11

S.C. Song, Z. Zhang, and B. H. Lee, "Effects of Boron Diffusion in pMOSFETs With TiN-HfSiO Gate Stack" IEEE ELECTRON DEVICE LETTERS, 26 (6), 366, 2005.05.23. https://doi.org/10.1109/LED.2005.848071.
10

J.H. Sim, B. H. Lee R. Choi, S.-C.Song, and G. Bersuker, "Hot Carrier Degradation of HfSiON Gate Dielectrics with TiN Electrode" IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 5 (2), 177, 2005.06.27. https://doi.org/10.1109/TDMR.2005.851211.
9

C.Y. Kang, P. Lysaght, R. Choi, B. H. Lee, S.J. Rhee, C. H.Choi, M. S. Akbar, and J.C. Lee, "Nickel-silicide phase effects on flatband voltage shift and equivalent oxide thickness decrease of hafnium silicon oxynitride metal-silicon-oxide capacitors" APPLIED PHYSICS LETTERS, 86, 222906, 2005.05.26. https://doi.org/10.1063/1.1942633.
8

C. D. Young, G. Bersuker, Y. Zhao, J. J. Peterson, J. Barnett, G. A. Brown, J. H. Sim, R. Choi, B. H. Lee and P. M. Zeitzoff, "Probing stress effects in HfO2 gate stacks with time dependent measurements" Microelectronics and Reliability, 45, 806-810, 2004.12.23. https://doi.org/10.1016/j.microrel.2004.11.043.
7

C.D. Young, Y. Zhao, M. Pendley, B. H. Lee, K. Matthews, J.H. Sim, R. Choi, G.A. Brown, R.W. Murto and G. Bersuker, "Ultra-Short Pulse Current-Voltage Characterization of the Intrinsic Characteristics of High-κ Devices" Japanese Journal of Applied Physics, 44 (4B), 2437-2440, 2005.04.21. http://iopscience.iop.org/1347-4065/44/4S/2437.
6

B.H. Lee, C. Young, R. Choi, J.H. Sim, G. Bersuker and G. Brown, "Transient Charging and Relaxation in High-k Gate Dielectric and Their Implications" Japanese Journal of Applied Physics, 44 (4B), 2415-2419, 2005.04.21. https://doi.org/10.1143/JJAP.44.2415.
5

J.H. Sim, R. Choi, B. H. Lee, C. Young and G. Bersuker, "Trapping/De-Trapping Gate Bias Dependence of Hf-Silicate Dielectrics with Poly and TiN Gate Electrode" Japanese Journal of Applied Physics, 44 (4B), 2420-2423, 2005.04.21. http://iopscience.iop.org/1347-4065/44/4S/2420.
4

R. Choi, B. H. Lee, C.D. Young, J.H. Sim, and G. Bersuker, "Temperature Effects of Constant Bias Stress on n-Channel FETs with Hf-based Gate Dielectric" Japanese Journal of Applied Physics, 44 (4B), 2201-2204, 2005.04.21. https://doi.org/10.1143/JJAP.44.2201.
3

J. Barnett, C.D. Young, N,Moumen, G.Bersuker, J.J.Peterson, G.A. Brown, B.H.Lee, H.R.Huff, "Enhanced surface preparation technique for the Si/high-k interface" Solid state pheonomena, 103-104, 11-14, 2005.04.01. https://doi.org/10.4028/www.scientific.net/SSP.103-104.11.
2

R. Choi, S.J. Rhee, B. H. Lee, J. C. Lee, and G. Bersuker, "Charge Trapping and Detrapping Characteristics in Hafnium Silicate Gate Stack Under Static and Dynamic Stress" IEEE ELECTRON DEVICE LETTERS, 26 (3), 197, 2005.02.28. https://doi.org/10.1109/LED.2004.842639.
1

M.S. Akbar, N. Moumen, J. Barnett, B. H. Lee e and J.C. Lee, "Mobility Improvement After HCl Post-Deposition Cleaning of High-k dielectric, A Potential Issue in Wet Etching of Dual Metal Gate Process Technology" IEEE ELECTRON DEVICE LETTERS, 26 (3), 163, 2005.02.28. https://doi.org/10.1109/LED.2005.843210.

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