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Total 19건 1 페이지

2008
19

H.J. Na, J. Lee, D. Heh , P. Sivasubramani , P. Kirsch, J. Oh, P.Majhi, B.H.Lee, S. Rivillon, Y. Chabal, "Effective surface passivation methodologies for high performance germanium Metal Oxide Semiconductor Field Effect Transistors" Appl. Phys. Lett., 93, 192115, 2008.11.14. http://doi.org/10.1063/1.3028025.
18

O.S. Yoo, J. Oh, C.Y. Kang, B.H. Lee, I.S. Han, W.-H. Choi, H.-M. Kwon, M.-K. Na, P. Majhi, H.-H.Tseng, R. Jammy, J.S. Wang, H.-D. Lee, "Effect of Si interlayer thickness and post-metallization annealing on Ge MOS capacitor on Ge-on-Si substrate" Materials Science and Engineering B, 154-155, p.102-105, 2008.12.05. http://doi.org/10.1016/j.mseb.2008.06.031.
17

J. G. Wang, J. Kim, C.Y. Kang, B.H. Lee, R. Jammy, R. Choi, and M. J. Kim, "Origin of tensile stress in the Si substrate induced by TiN/HfO2 metal gate/high-k dielectric gate stack" Appl. Phys. Lett., 93, 161913, 2008.10.24. http://doi.org/10.1063/1.3009572.
16

K. Choi, H.C.Wen, G. Bersuker, H. Harris, B.H.Lee, "Mechanism of flatband voltage roll-off studied with Al2O3 film deposited on terraced oxide" Appl. Phys. Lett., 93, 133056, 2008.10.01. http://doi.org/10.1063/1.2993335.
15

Y. Wang, K.P. Cheung, R. Choi, B.H.Lee, "An Accurate Capacitance-Voltage Measurement Method for Highly Leaky Devices-Part I" IEEE Transactions on Electron Devices, 55 (9), p.2429-2436, 2008.08.08. http://doi.org/10.1109/TED.2008.928489.
14

Y. Wang, K.P. Cheung, R. Choi, B.H.Lee, "An Accurate Capacitance-Voltage Measurement Method for Highly leaky Devices-Part II" IEEE Transactions on Electron Devices, 55 (9), p.2437-2442, 2008.08.19. http://doi.org/10.1109/TED.2008.927659.
13

J.M. Lee, H.K. Park, M. Hasan, M. Jo, M. Chang, B. H. Lee, C.S. Park, C.Y. Kang and H. Hwang, "Modulation of TiSiN effective work function using high-pressure postmetallization annealing in dilute oxygen ambient" Appl. Phys. Lett., 92, 263505, 2008.07.03. http://doi.org/10.1063/1.2953192.
12

K.T.Lee, C.Y. Kang, B.S. Ju, R. Choi, K.S.Min, O.S.Yoo, B.H.Lee, R. Jammy, J.C.Lee, H.D. Lee, Y.H. Jeong, "Effects of In Situ O2 Plasma Treatment on OFF-State Leakage and Reliability in Metal-Gate/High-k Dielectric MOSFETs" IEEE Electron Device Letters, 29 (6), p.565-567, 2008.05.20. http://doi.org/10.1109/LED.2008.922992.
11

C.Y.Kang, J.W. Yang, J.Oh, R.Choi, Y.J.Suh, H.C. Floresca, J. Kim, M Kim, B.H. Lee, H.H.. Tseng, R. Jammy, "Effects of Film Stress Modulation Using TiN Metal Gate on Stress Engineering and Its Impact on Device Characteristics in Metal Gate/ High-k Dielectric SOI FinFETs" IEEE Electron Device Letters, 29 (5), p.487-490, 2008.04.22. http://doi.org/10.1109/LED.2008.919782.
10

K.T.Lee, C.Y.Kang, O.S.Yoo, R.Choi, B.H.Lee, J.C.Lee, H.D.Lee and Y.H.Yoon, "PBTI-Associated High Temperature Hot Carrier Degradation of nMOSFETs With Metal-Gate/High-k Dielectrics" IEEE Electron Device Letters, 29 (4), p.389-391, 2008.03.21. http://doi.org/10.1109/LED.2008.918257.
9

P.Kirsch, P. Sivasubramani , J. Huang , C. Young , M. Quevedo-Lopez , H.-C. Wen , H. Al-Shareef , K. Choi , C.S. Park , K. Freeman , M. Hussain , G. Bersuker , H. R. Harris , P. Majhi , R. Choi , P.Lysaght , B.H. Lee , H.-H. Tseng , R. Jammy , T. Boescke, "Dipole Model Explaining High-k/Metal Gate Field Effect Transistor Threshold Voltage Tuning" Appl. Phys. Lett., 92, 092901, 2008.03.04. http://doi.org/10.1063/1.2890056.
8

A. Neugroschel, G.Bersuker, R.Choi, and B.H.Lee, "Effect of the Interfacial SiO2 Layer in High-k HfO2 Gate Stacks on NBTI" IEEE Transactions on Device and Materials Reliability, 8 (1), p.47-61, 2008.03.05. http://doi.org/10.1109/TDMR.2008.916294.
7

O. Sharia, G. Bersuker, B. H. Lee and A. Demkov, "Effects of aluminum incorporation on band alignment at the SiO2/HfO2 interface" PHYSICAL REVIEW B, 77, p.1-7, 2008.02.28. http://doi.org/10.1103/PhysRevB.77.085326.
6

H. Park, R.Choi, B.H. Lee, G. Bersuker, H. Hwang, "Stress-Polarity-Independent Negative Threshold Voltage Shift in HfO2/TiN P-Channel Metal Oxide Semiconductor Field-Effect Transistor" Jpn. J. Appl. Phys., 47 (1), p.136-138, 2008.01.18. http://doi.org/10.1143/JJAP.47.136.
5

P.S. Lysaght, J.C. Woicik, M. A. Sahiner, B.H. Lee and R. Jammy, "Incipient amorphous-to-crystalline transition in HfO2 as a function of thickness scaling and anneal temperature" Journal of Non-Crystalline Solids, 354, p.399-403, 2007.10.26. http://doi.org/10.1016/j.jnoncrysol.2007.07.050.
4

H.K. Park, M.S. Jo, H.J. Choi, M. Hasan, R. Choi, P. Kirsch, C.Y. Kang, B.H. Lee, T.W. Kim, T.H. Lee and H. Hwang, "The Effect of Nanoscale Nonuniformity of Oxygen Vacancy on Electrical and Reliability Characteristics of HfO2 MOSFET Devices" IEEE Electron Device Letters, 29 (1), p.54-56, 2007.12.26. http://doi.org/10.1109/LED.2007.911992.
3

H.C. Wen, P. Majhi, K.Choi, C.S.Park, H.Alshareef, H.Rusty, H.Luan, H.Niimi, H.B.Park, G.Bersuker, P.Lysaght, D.L.Kwong, S.C.Song, B. H. Lee and R. Jammy, "Decoupling the Fermi level pinning effect and intrinsic limitations on p-type effective work function metal electrodes" Microelectronic Engineering, 85, p.2-8, 2008.05.16. http://doi.org/10.1016/j.mee.2007.05.006.
2

Y.Y.Zhang, J.Oh, T.S Bae, Z.Zhong, S.G.Li, S.Y. Jung, K.Y.Park, G.W.Lee, J.S.Wang, P.Majhi, B.H.Lee, H.H. Tseng, Y.H. Jeong, H.D. Lee, "Phase Separation of Ni Germanide Formed on a Ge-on-Si Structure for Ge MOSFETs" Electrochemical and Solid-State Lett., 11 (1), p.H1-H3, 2007.10.22. http://doi.org/10.1149/1.2795836.
1

B.H.Lee, S.C.Song, R.Choi and P.Kirsch, "Metal Electrode/High-k Dielectric Gate Stack Technology for Power Management" IEEE Transactions on Electron Devices, 55 (1), p.8-20, 2007.12.26 (invited). http://doi.org/10.1109/TED.2007.911044.

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